Patent US3255050A successfully refreshed from Google Patents.
US3255050A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of semiconductor devices by transmutation doping
Assignee: Individual
•
Filing: 1962-03-23
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Granted: 1966-06-07
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Expires: 1982-03-23
Abstract
No abstract record available.
Inventors
- 👤 Carl N Klahr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:03
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/20; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/165
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
113 words
A METHOD OF IMPURITY DOPING A SEMICONDUCTOR CRYSTAL TO PRODUCE A SPATIAL PATTERN OF DOPED REGIONS THEREWITHIN COMPRISING THE STEPS OF SELECTING A CRYSTAL OF SEMICONDUCTOR MATERIAL OF A PRESCRIBED CONDUCTIVITY TYPE, ENVELOPING SAID SEMICONDUCTOR CRYSTAL WITH A THERMAL NEUTRON ABSORBING MATERIAL HAVING A SLIT THERETHROUGH, SAID MATERIAL BEING SELECTED FROM THE GROUP CONSISTING OF CADMIUM AND BORON, EXPOSING THE ENVELOPED CRYSTAL TO THERMAL NEUTRON RADIATION WHICH IS CAPABLE OF TRANSFORMING THE REGION OF SAID CRYSTAL ADJACENT SAID SLIT TO A CONDUCTIVITY TYPE OF OPPOSITE NATURE TO SAID PRESCRIBED CONDUCTIVITY TYPE FOR A TIME SUFFICIENT TO ACCOMPLISH SAME, REMOVING SAID CRYSTAL FROM THE RADIATION, AND ANNEALING SAID CRYSTAL TO REMOVE RADIATION PRODUCED DEFECTS.
Claim 2
Independent Claim
113 words
A METHOD OF IMPURITY DOPING A SEMICONDUCTOR CRYSTAL TO PRODUCE A SPATIAL PATTERN OF DOPED REGIONS THEREWITHIN COMPRISING THE STEPS OF SELECTING A CRYSTAL OF SEMICONDUCTOR MATERIAL OF A PRESCRIBED CONDUCTIVITY TYPE, ENVELOPING SAID SEMICONDUCTOR CRYSTAL WITH A THERMAL NEUTRON ABSORBING MATERIAL HAVING A SLIT THERETHROUGH, SAID MATERIAL BEING SELECTED FROM THE GROUP CONSISTING OF CADMIUM AND BORON, EXPOSING THE ENVELOPED CRYSTAL TO THERMAL NEUTRON RADIATION WHICH IS CAPABLE OF TRANSFORMING THE REGION OF SAID CRYSTAL ADJACENT SAID SLIT TO A CONDUCTIVITY TYPE OF OPPOSITE NATURE TO SAID PRESCRIBED CONDUCTIVITY TYPE FOR A TIME SUFFICIENT TO ACCOMPLISH SAME, REMOVING SAID CRYSTAL FROM THE RADIATION, AND ANNEALING SAID CRYSTAL TO REMOVE RADIATION PRODUCED DEFECTS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-06-06 | 1969-12-06 | 1970-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-06-06 | 1973-12-06 | 1974-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-06-06 | 1977-12-06 | 1978-06-07 | $7700.00 | Window Closed / Lapsed |