US2994628A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor devices and their manufacture
Assignee: Battelle Memorial Institute Inc
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Filing: 1959-12-01
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Granted: 1961-08-01
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Expires: 1979-12-01
Abstract
No abstract record available.
Inventors
- 👤 Paskell Ernest
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:10
CPC Classifications
H; H10; H10P; H10P95/00; H01; H01C; H01C7/00; H01C7/10; H01C7/1013; H10D; H10D99/00; Y; Y10; Y10S; Y10S438/00; Y10S438/936; Y10S438/942
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
147 words
IN THE PROCESS OF PREPARING A SEMICONDUCTOR DEVICE, THE STEPS COMPRISING, SELECTING A SECTION OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL OF A PRESCRIBED CONDUCTIVITY TYPE, REDUCING THE THICKNESS OF SAID SECTION TO SUBSTANTIALLY THE DESIRED SEMICONDUCTOR CROSS-SECTION, MASKING A PORTION OF AT LEAST ONE SIDE OF SAID SIDE SECTION WITH THE REMAINDER OF SAID SECTION BEING EXPOSED TO ATMOSPHERE, SUBJECTING SAID SECTION TO AN ATMOSPHERE WHICH IS CAPABLE OF TRANSFORMING SAID EXPOSED SURFACES TO A CONDUCTIVITY TYPE OF OPPOSITE NATURE TO SAID PRESCRIBED CONDUCTIVITY TYPE FOR A TIME SUFFICIENT TO ACCOMPLISH SAME, REMOVING SAID MASKING FROM SAID PORTION OF SAID SECTION, SUBJECTING THE ENTIRE SURFACE AREA OF SAID SECTION TO SAID ATMOSPHERE FOR AN ADDITIONAL PERIOD OF TIME WHICH IS RELATIVELY SHORT COMPARED TO THE ORIGINAL LENGTH OF TIME, AND TRIMMING THE EDGES OF SAID SECTION, WHEREBY INTEGRAL PARALLEL JUNCTIONS ARE CREATED WHICH EXHIBIT RELATIVELY DIVERSE BREAKDOWN VOLTAGES.
Claim 2
Dependent Claim
147 words
IN THE PROCESS OF PREPARING A SEMICONDUCTOR DEVICE, THE STEPS COMPRISING, SELECTING A SECTION OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL OF A PRESCRIBED CONDUCTIVITY TYPE, REDUCING THE THICKNESS OF SAID SECTION TO SUBSTANTIALLY THE DESIRED SEMICONDUCTOR CROSS-SECTION, MASKING A PORTION OF AT LEAST ONE SIDE OF SAID SIDE SECTION WITH THE REMAINDER OF SAID SECTION BEING EXPOSED TO ATMOSPHERE, SUBJECTING SAID SECTION TO AN ATMOSPHERE WHICH IS CAPABLE OF TRANSFORMING SAID EXPOSED SURFACES TO A CONDUCTIVITY TYPE OF OPPOSITE NATURE TO SAID PRESCRIBED CONDUCTIVITY TYPE FOR A TIME SUFFICIENT TO ACCOMPLISH SAME, REMOVING SAID MASKING FROM SAID PORTION OF SAID SECTION, SUBJECTING THE ENTIRE SURFACE AREA OF SAID SECTION TO SAID ATMOSPHERE FOR AN ADDITIONAL PERIOD OF TIME WHICH IS RELATIVELY SHORT COMPARED TO THE ORIGINAL LENGTH OF TIME, AND TRIMMING THE EDGES OF SAID SECTION, WHEREBY INTEGRAL PARALLEL JUNCTIONS ARE CREATED WHICH EXHIBIT RELATIVELY DIVERSE BREAKDOWN VOLTAGES.
References Cited (Backward Citations)
US2841510A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1964-07-31 | 1965-01-30 | 1965-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1968-07-31 | 1969-01-30 | 1969-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1972-07-31 | 1973-01-30 | 1973-08-01 | $7700.00 | Window Closed / Lapsed |