Tunnel diode memory device

Claim 1

DATA STORAGE MEANS COMPRISING A MATRIX OF A PLURALITY OF STORAGE MEANS BEING ARRANGED IN A TWO DIMENSIONAL ARRAY OF ROWS AND COLUMNS; EACH OF SAID STORAGE MEANS COMPRISING FIRST AND SECOND DIODE MEANS EACH HAVING FIRST AND SECOND TERMINALS; IMPEDANCE MEANS, THE FIRST TERMINALS OF EACH OF SAID DIODE MEANS BEING CONNECTED TO ONE TERMINAL OF SAID IMPEDANCE MEANS, SAID SECOND DIODE MEANS BEING A TUNNE6 DIODE; SAID FIRST TERMINALS OF SAID FIRST DIODE MEANS AND SAID TUNNEL DIODED THE ANODE TERMINAL; MEANS CONNECTED TO FIRST DIODE MEANS SECOND TERMINAL FOR CHANGING THE LOAD IMPEDANCE OF SAID TUNNEL DIODE MEANS UNDER PREDETERMINED INPUT CONDITIONS TO CHANGE THE OPERATING STATE OF SAID TUNNEL DIODE MEANS; EACH OF SAID ROW AND COLUMNS INCLUDING A CONDUCTOR; EACH OF SAID ROW CONDUCTORS BEING CONNECTED TO THE SECOND TERMINAL OF SAID FIRST DIODE MEANS OF EACH STORAGE MEANS ASSOCIATED WITH THAT ROW; EACH OF SAID COLUMN CONDUCTORS BEING CONNECTED TO THE SECOND TERMINAL OF SAID SECOND DIODE MEANS; A CONSTANT VOLTAGE SOURCE CONNECTED TO THE SECOND TERMINAL OF EACH OF SAID IMPEDANCE MEANS, FIRST SIGNAL GENERATING MEANS CONNECTED TO EACH OF SAID ROW CONDUCTOR; SECOND SIGNAL GENERATING MEANS CONNECTED TO EACH OF SAID COLUMN CONDUCTORS; SAID FIRST SIGNAL GENERATING MEANS INCLUDING MEANS FOR GENERATING FIRST ELECTRICAL SIGNAL REPRESENTING THE INFORMATION STATE TO BE STORED BY THE STORAGE MEANS OF THE ASSOCIATED ROW; SAID SECOND SIGNAL GENERATING MEANS INCLUDING MEANS FOR GENERATING A SECOND ELECTRICAL SIGNAL SIMULTANEOUSLY WITH SAID FIRST ELECTRICAL SIGNAL FOR CAUSING THE STORAGE MEANS OF THE ASSOCIATED COLUMN TO ASSUME THE INFORMATION STATE REPRESENTED BY SAID FIRST ELECTRICAL SIGNAL, EACH OF SAID FIRST SIGNAL GENERATING MEANS INCLUDING SECOND MEANS FOR SENSING THE INFORMATION STATE OF SAID STORAGE MEANS SAID SECOND MEANS INCLUDING MEANS FOR INHIBITING THE FIRST ELECTRICAL SIGNAL, EACH OF SAID SECOND SIGNAL GENERATING MEANS INCLUDING SECOND MEANS FOR GENERATING A THIRD ELECTRICAL SIGNAL ENABLING SAID FIRST SIGNAL GENERATING MEANS TO SENSE THE STATE OF SAID STORAGE MEANS, EACH OF SAID STORAGE MEANS BEING ADAPTED TO PREVENT A CHANGE IN ITS INFORMATION STATE DURING A SENSING OPERATION, AND BEING FURTHER ADAPTED TO PERMIT A CHANGE IN ITS INFORMATION STATE DURING A STORING OPERATION REGARDLESS OF THE PREVIOUS MEMORY STATE OF SAID STORAGE MEANS.