US3194701A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming p-n junctions on semiconductors
Assignee: Individual
•
Filing: 1963-04-01
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Granted: 1965-07-13
•
Expires: 1983-04-01
Abstract
No abstract record available.
Inventors
- 👤 Robert P Lothrop
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 04:23
CPC Classifications
H; H10; H10P; H10P95/00; H10P32/00; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
39 words
IN A PROCESS FOR FORMING A P-N JUNCTION ON THE SURFACE OF A SEMICONDUCTOR WITH PHOSPHORUS, THE STEP COMPRISING EXPOSING SAID SURFACE TO AN AZEOTROPIC MIXTURE OF GASEOUS PHOSPHORUS PENTOXIDE AND WATER VAPOR FOR A CONTROLLED PERIOD OF TIME.
Claim 2
Dependent Claim
39 words
IN A PROCESS FOR FORMING A P-N JUNCTION ON THE SURFACE OF A SEMICONDUCTOR WITH PHOSPHORUS, THE STEP COMPRISING EXPOSING SAID SURFACE TO AN AZEOTROPIC MIXTURE OF GASEOUS PHOSPHORUS PENTOXIDE AND WATER VAPOR FOR A CONTROLLED PERIOD OF TIME.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-07-12 | 1969-01-11 | 1969-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-07-12 | 1973-01-11 | 1973-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-07-12 | 1977-01-11 | 1977-07-13 | $7700.00 | Window Closed / Lapsed |