Vapor deposition process wherein the vapor contains both donor and acceptor impurities

Claim 1

A PROCESS OF PRODUCING A VAPOR-GROWN SEMICONDUTOR STRUCTURE WHEREIN A PLUALITY OF LAYERS HAVING A GRADIENT OF IMPURITY CONCENTRATION ARE GROWN UPON A SEMICONDUCTOR SUBSTRATE, COMPRISING THE STEPS OF: SIMULTANEOUSLY REACTING IN A FIRST ZONE OF A REACTION CONTAINER A HALOGEN TRANSPORT ELEMENT WITH A SOURCE OF SEMICONDUCTOR MATERIAL AND AT LEAST TWO SOURCES OF IMPURITIES OFOPPOSITE CONDUCTIVITY TYPE, THE P TYPE IMPURITY PREDOMINATING, TO FORM COMBINED HALIDE VAPORS OF THE SEMICONDUCTOR MATERIAL AND THE RESPECTIVE IMPURITIES OF OPPOSITE CONDUCTIVITY TYPE, THE PROPENSITY OF THE P TYPE IMPURITY TO REMAIN IN THE HALIDE BEING GREATER THAN THE PROPENSITY OF THE N TYPE IMPURITY SO TO REMAIN; DISPOSING A SEMICONDUCTOR SUBSTRATE IN A SECOND ZONE OF SAID REACTION CONTAINER; PROVIDING A TEMPERATURE GRADIENT BETWEEN SAID FIRST ZONE AND SAID SECOND ZONE TO FREE THE SEMICONDUCTOR MATERIAL AND THE RESPECTIVE IMPURITIES FROM SAID COMBINED HALIDE VAPORS OVER SAID SMICONDUCTOR SUBSTRATE WHEREBY, DUE TO THE GREATER PROPENSITY OF THE P TYPE IMPURITY TO REMAIN IN THE HALIDE, THE INITIALLY GROWN THIN LAYER OF SEMICONDUCTOR MATERIAL UPON SAID SUBSTRATE IS OF N CONDUCTIVITY TYPE.