Patent US3147141A successfully refreshed from Google Patents.
US3147141A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for the manufacture of high purity elemental silicon by thermal decomposition of silane
Assignee: Individual
•
Filing: 1960-05-03
•
Granted: 1964-09-01
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Expires: 1980-05-03
Abstract
No abstract record available.
Inventors
- 👤 Ishizuka Hiroshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 20:18
CPC Classifications
C; C01; C01B; C01B33/00; C01B33/02; C01B33/021; C01B33/027; C01B33/035; C23; C23C; C23C16/00; C23C16/22
Claims Analysis
Total Claims: 0
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Cited
US2895858A
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US2851342A
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US3011877A
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US2904404A
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US2993763A
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US3017251A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-09-01 | 1968-03-02 | 1968-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-09-01 | 1972-03-02 | 1972-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-09-01 | 1976-03-02 | 1976-09-01 | $7700.00 | Window Closed / Lapsed |