Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal

Claim 1

A CRUCIBLE-FREE, FLOATING MOLTEN ZONE METHOD OF MAKING A MONOCRYSTALLINE SILICON SEMICONDUCTOR SOLID BODY FROM A POLYCRYSTALLINE SILICON BODY, COMPRISING SUPPORTING THE POLYCRYSTALLINE SOLID BODY VERTICALLY, FUSING A MONOCRYSTALLINE SILICON SEED CRYSTAL TO THE POLYCRYSTALLINE SILICON BODY, HEATING A TRANSVERSE ZONE TO PRODUCE A MOLTEN ZONE EXTENDING OVER THE CROSS SECTION OF THE BODY, REPEATEDLY PASSING SAID MOLTEN ZONE ALONG SAID INITIALLY POLYCRYSTALLINE BODY IN ONE AND THE SAME DIRECTION, THE PASSES STARTING AT A POINT TO INCLUDE THE LOCATION OF FUSION OF THE SEED CRYSTAL TO THE POLYCRYSTALLINE BODY, THE PASSES CONVERTING POLYCRYSTALLINE TO MONOCRYSTALLINE SILICON, AND THEREAFTER PASSING SAID MOLTEN ZONE IN SAID DIRECTION BUT STARTING AT ANOTHER LOCATION REMOVED FROM SAID LOCATION OF FUSION OF THE SEED CRYSTAL BUT WITHIN THE ORIGINALLY POLYCRYSTALLNE SILICON BODY WHICH IS NOW MONOCRYSTALLINE SILICON.