Patent US3098774A successfully refreshed from Google Patents.
US3098774A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing single crystal silicon surface layers
Assignee: Individual
•
Filing: 1960-05-02
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Granted: 1963-07-23
•
Expires: 1980-05-02
Abstract
No abstract record available.
Inventors
- 👤 Mark Albert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:52
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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US2763581A
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US2759855A
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US2910394A
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US2854318A
Cited
US2895858A
Cited
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Cited
US2880117A
Cited
US2893850A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-07-22 | 1967-01-21 | 1967-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-07-22 | 1971-01-21 | 1971-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-07-22 | 1975-01-21 | 1975-07-23 | $7700.00 | Window Closed / Lapsed |