Masking and fabrication technique

Claim 1

IN THE FABRICATION OF A SEMICONDUCTTOR DEVICE, THE STEPS OF PLACING A THIN METAL MASK DEFINING AN OPENING IN INTIMATE CONTACT WITH A SURFACE OF A SEMICONDUCTOR BODY, SAID MASK CHARACTERIZED BY A THICKNESS WHICH IS SMALL RELATIVE TO THE THICKNESS OF THE BODY AND BY A THIN CARBON FILM, HAVING A THICKNESS MUCH LESS THAN THAT OF SAID MASK LYING BETWEEN THE MAIN PORTION OF SAID MASK AND SAID BODY TO PREVENT BONDING AND ALLOYING THEREBETWEEN, HEATING SAID MASK AND SAID SEMICONDUCTOR BODY TO AN ELEVATED TEMPERATURE, DEPOSITING CONYACT METERIAL ONTO THE AREA OF THE SURFACE OF THE SEMICONDUCTOR BODY EXPOSED BY SAID OPENING IN SAID MASK WHILE MAINTAINING SAID SEMICONDUCTOR BODY AT SAID ELEVATED TEMPERATURE SO THAT THE CONTACT MATERIAL WILL ALLOY THEREWITH, MOVING SAID MASK RELATIVE TO SAID SEMICONDUCTOR BODY, EXPOSING A NEW AREA OF SAID BODY TO SAID OPENING AND DEPOSITING CONTACT MATERIAL ONTO NEW AREA THROUGH SAID OPENING IN SAID MASK.