Patent US3085033A successfully refreshed from Google Patents.
US3085033A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of semiconductor devices
Assignee: AT&T Inc
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Filing: 1960-03-08
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Granted: 1963-04-09
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Expires: 1980-03-08
Abstract
No abstract record available.
Inventors
- 👤 Eileen T Handelman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:58
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/118; Y10S148/144; Y10S438/00; Y10S438/914; Y10S438/92; Y10S438/979
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
184 words
IN A METHOD FOR FABRICATING A TUNNEL DIODE THE STEPS OF PREPARING A SEMICONDUCTOR CRYSTAL WHICH IS CHARACTERIZED BY A SURFACE PORTION WHICH INCLUDES A SUBSTANTIALLY UNIFORM CONCENTRATION OF A FIRST IMPURITY AND A GRADED CONCENTRATION OF A SECOND IMPURITY, THE CONCENTRATION OF SAID SECOND IMPURITY DECREASING WITH INCREASING DISTANCE FROM THE SURFACE, THE CONCENTRATION OF SAID FIRST AND SECOND IMPURITIES BEING SUCH THAT THERE EXISTS A PN JUNCTION IN SAID SURFACE PORTION, SAID SECOND IMPURITY HAVING A LOW DIFFUSION COEFFICIENT AND A LOW DISTRIBUTION COEFFICIENT, SAID FIRST IMPURITY HAVING A DIFFUSION COEFFICIENT SUBSTANTIALLY HIGHER THAN THAT OF THE SECOND IMPURITY AND A DISTRIBUTION COEFFICIENT HIGHER THAN THAT OF THE SECOND IMPURITY, HEATING SAID SEMICONDUCTOR CRYSTAL IN AN OXIDIZING ATMOSPHERE, SAID HEATING BEING FOR A TIME AND AT A TEMPERATURE TO GROW A SURFACE OXIDE OVER SAID SURFACE PORTION WHEREBY THE DEPTH OF THE PN JUNCTION BELOW THE SURFACE OF THE SEMICONDUCTOR CRYSTAL DECREASES, REMOVING THE OXIDE AND REHEATING THE CRYSTAL TO FORM A NEW SURFACE OXIDE AND TO DECREASE STILL MORE THE DEPTH OF THE PN JUNCTION BELOW THE SURFACE OF THE CRYSTAL.
Claim 2
Dependent Claim
184 words
IN A METHOD FOR FABRICATING A TUNNEL DIODE THE STEPS OF PREPARING A SEMICONDUCTOR CRYSTAL WHICH IS CHARACTERIZED BY A SURFACE PORTION WHICH INCLUDES A SUBSTANTIALLY UNIFORM CONCENTRATION OF A FIRST IMPURITY AND A GRADED CONCENTRATION OF A SECOND IMPURITY, THE CONCENTRATION OF SAID SECOND IMPURITY DECREASING WITH INCREASING DISTANCE FROM THE SURFACE, THE CONCENTRATION OF SAID FIRST AND SECOND IMPURITIES BEING SUCH THAT THERE EXISTS A PN JUNCTION IN SAID SURFACE PORTION, SAID SECOND IMPURITY HAVING A LOW DIFFUSION COEFFICIENT AND A LOW DISTRIBUTION COEFFICIENT, SAID FIRST IMPURITY HAVING A DIFFUSION COEFFICIENT SUBSTANTIALLY HIGHER THAN THAT OF THE SECOND IMPURITY AND A DISTRIBUTION COEFFICIENT HIGHER THAN THAT OF THE SECOND IMPURITY, HEATING SAID SEMICONDUCTOR CRYSTAL IN AN OXIDIZING ATMOSPHERE, SAID HEATING BEING FOR A TIME AND AT A TEMPERATURE TO GROW A SURFACE OXIDE OVER SAID SURFACE PORTION WHEREBY THE DEPTH OF THE PN JUNCTION BELOW THE SURFACE OF THE SEMICONDUCTOR CRYSTAL DECREASES, REMOVING THE OXIDE AND REHEATING THE CRYSTAL TO FORM A NEW SURFACE OXIDE AND TO DECREASE STILL MORE THE DEPTH OF THE PN JUNCTION BELOW THE SURFACE OF THE CRYSTAL.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-04-08 | 1966-10-08 | 1967-04-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-04-08 | 1970-10-08 | 1971-04-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-04-08 | 1974-10-08 | 1975-04-09 | $7700.00 | Window Closed / Lapsed |