Patent US3085032A successfully refreshed from Google Patents.
US3085032A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Treatment of gallium arsenide
Assignee: AT&T Inc
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Filing: 1960-02-26
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Granted: 1963-04-09
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Expires: 1980-02-26
Abstract
No abstract record available.
Inventors
- 👤 Calvin S Fuller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 22:12
CPC Classifications
H; H10; H10P; H10P95/00; C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B29/42; C30B31/00; C30B31/06; C30B31/08; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951; Y10S438/00; Y10S438/914; Y10S438/915
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
57 words
THE METHOD OF INCREASING THE DONOR CONCENTRATION OF A SURFACE PORTION OF A GALLIUM ARSENIDE BODY BY DIFFUSING SILICON INTO SAID SURFACE PORTION COMPRISING THE STEP OF HEATING THE GALLIUM ARSENIDE BODY TO A TEMPERATURE OF ABOUT 820 DEGREES CENTIGRADE FOR ABOUT TWENTYFOUR HOURS WHILE EXPOSING THE SURFACE PORTION TO AN ATMOSPHERE RICH IN SILICON TETRACHLORIDE VAPOR.
Claim 2
Independent Claim
57 words
THE METHOD OF INCREASING THE DONOR CONCENTRATION OF A SURFACE PORTION OF A GALLIUM ARSENIDE BODY BY DIFFUSING SILICON INTO SAID SURFACE PORTION COMPRISING THE STEP OF HEATING THE GALLIUM ARSENIDE BODY TO A TEMPERATURE OF ABOUT 820 DEGREES CENTIGRADE FOR ABOUT TWENTYFOUR HOURS WHILE EXPOSING THE SURFACE PORTION TO AN ATMOSPHERE RICH IN SILICON TETRACHLORIDE VAPOR.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-04-08 | 1966-10-08 | 1967-04-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-04-08 | 1970-10-08 | 1971-04-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-04-08 | 1974-10-08 | 1975-04-09 | $7700.00 | Window Closed / Lapsed |