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US3076731A
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Semiconductor devices and method of making the same
Assignee: Raytheon Co
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Filing: 1958-08-04
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Granted: 1963-02-05
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Expires: 1978-08-04
Abstract
No abstract record available.
Inventors
- 👤 Jr Arthur L Wannlund
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 20:25
CPC Classifications
H; H10; H10P; H10P95/00; C; C30; C30B; C30B31/00; C30B31/04; H10P32/00; H10P32/10; H10P32/16
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
122 words
THE METHOD OF PRODUCING A LOW RESISTIVITY REGION WITHIN A SEMICONDUCTOR BODY COMPRISING THE STEPS OF: PLACING AN ALLLOY OF BORON AND AT LEAST ONE METAL HAVING A RELATIVELY HIGH NUMERICAL SEGREGATION COEFFICIENT WITH BORON UPON AT LEAST A PORTION OF ONE SURFACE OF SAID SEMICONDUCTOR BODY, HEATING THE COMBINATION TO A PREDETERMINED TEMPERATURE, EVAPORATING A METAL IN WHICH SAID ALLOY AND SAID BODY ARE SOLVENT UPON AT LEAST A PORTION OF SAID ALLOY, SAID PREDETERMINED TEMPERATURE BEING AT LEAST THE EUTECTIC MELTING TEMPERATURE OF THE TERNARY ALLOY OF BORON, SAID ONE METAL, AND SAID SOLVENT METAL, WHEREBY A PORTION OF SAID ALLOY AND SAID BODY ARE DISSOLVED BY SAID SOLVENT METAL, AND COOLING THE COMBINATION TO FORM SAID LOW RESISTIIVITY REGION.
Claim 2
Independent Claim
122 words
THE METHOD OF PRODUCING A LOW RESISTIVITY REGION WITHIN A SEMICONDUCTOR BODY COMPRISING THE STEPS OF: PLACING AN ALLLOY OF BORON AND AT LEAST ONE METAL HAVING A RELATIVELY HIGH NUMERICAL SEGREGATION COEFFICIENT WITH BORON UPON AT LEAST A PORTION OF ONE SURFACE OF SAID SEMICONDUCTOR BODY, HEATING THE COMBINATION TO A PREDETERMINED TEMPERATURE, EVAPORATING A METAL IN WHICH SAID ALLOY AND SAID BODY ARE SOLVENT UPON AT LEAST A PORTION OF SAID ALLOY, SAID PREDETERMINED TEMPERATURE BEING AT LEAST THE EUTECTIC MELTING TEMPERATURE OF THE TERNARY ALLOY OF BORON, SAID ONE METAL, AND SAID SOLVENT METAL, WHEREBY A PORTION OF SAID ALLOY AND SAID BODY ARE DISSOLVED BY SAID SOLVENT METAL, AND COOLING THE COMBINATION TO FORM SAID LOW RESISTIIVITY REGION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-02-04 | 1966-08-06 | 1967-02-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-02-04 | 1970-08-06 | 1971-02-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-02-04 | 1974-08-06 | 1975-02-05 | $7700.00 | Window Closed / Lapsed |