Patent US3025589A successfully refreshed from Google Patents.
US3025589A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor devices
Assignee: Fairchild Semiconductor Corp
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Filing: 1959-05-01
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Granted: 1962-03-20
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Expires: 1979-05-01
Abstract
No abstract record available.
Inventors
- 👤 Jean A Hoerni
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:59
CPC Classifications
H; H10; H10D; H10D10/00; H10D1/00; H10D1/40; H10D48/00; H10D48/30; H10D48/38; H10D84/00; H10D84/60; H10D84/645; H10D99/00; H10P; H10P10/00; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; H10P95/00; H10W; H10W20/00; H10W20/40; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/167; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
112 words
THE METHOD OF MAKING SEMICONDUCTOR DEVICES, COMPRISING THE FOLLOWING STEPS: (A) FORMING A NON-CONDUCTING COATING ON A SURFACE OF A SEMICONDUCTOR BODY; (B) OPENING A HOLE THROUGH SAID COATING, THEREBY EXPOSING A LIMITED SURFACE AREA OF THE SEMICONDUCTOR; (C) DIFFUSING INTO THE SEMICONDUCTOR, THROUGH SUCH HOLE, AN IMPURITY FORMING WITHIN THE SEMICONDUCTOR, BENEATH THE HOLE, A P-N JUNCTON EXTENDING TO THE SEMICONDUCTOR SURFACE UNDERNEATH SAID COATING; (D) RE-FORMING A NON-CONDUCTING COATING ON THE SEMICONDUCTOR SURFACE WITHIN SUCH HOLE; (E) AND OPENING A NEW HOLE THROUGH THE LAST-MENTIONED COATING TO THE SEMICONDUCTOR SURFACE, WHILE LEAVING PERMENENTLY IN PLACE THE COATING COVERING ALL PARTS OF THE P-N JUNCTION THAT EXTEND TO THE SEMICONDUCTOR SURFACE.
Claim 2
Independent Claim
112 words
THE METHOD OF MAKING SEMICONDUCTOR DEVICES, COMPRISING THE FOLLOWING STEPS: (A) FORMING A NON-CONDUCTING COATING ON A SURFACE OF A SEMICONDUCTOR BODY; (B) OPENING A HOLE THROUGH SAID COATING, THEREBY EXPOSING A LIMITED SURFACE AREA OF THE SEMICONDUCTOR; (C) DIFFUSING INTO THE SEMICONDUCTOR, THROUGH SUCH HOLE, AN IMPURITY FORMING WITHIN THE SEMICONDUCTOR, BENEATH THE HOLE, A P-N JUNCTON EXTENDING TO THE SEMICONDUCTOR SURFACE UNDERNEATH SAID COATING; (D) RE-FORMING A NON-CONDUCTING COATING ON THE SEMICONDUCTOR SURFACE WITHIN SUCH HOLE; (E) AND OPENING A NEW HOLE THROUGH THE LAST-MENTIONED COATING TO THE SEMICONDUCTOR SURFACE, WHILE LEAVING PERMENENTLY IN PLACE THE COATING COVERING ALL PARTS OF THE P-N JUNCTION THAT EXTEND TO THE SEMICONDUCTOR SURFACE.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-03-19 | 1965-09-18 | 1966-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-03-19 | 1969-09-18 | 1970-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-03-19 | 1973-09-18 | 1974-03-20 | $7700.00 | Window Closed / Lapsed |