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Patent US2985550A successfully refreshed from Google Patents.
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US2985550A Expired / Lapsed US ⏱️ 0.0 years remaining

Production of high temperature alloyed semiconductors

Assignee: Texas Instruments Inc
•
Filing: 1957-01-04
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Granted: 1961-05-23
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Expires: 1977-01-04
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Abstract

No abstract record available.

Inventors

  • 👤 Robert E Anderson

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 22:48
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 61 words
A METHOD FOR MAKING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF ALLOYING A FIRST PORTION OF A DOT COMPRISED OF INDIUM WITH A WAFER OF N-TYPE SILICON TO FORM A P-N JUNCTION AND ALLOYING LEAD INTO AND THROUGHOUT THE REMAINING PORTION OF SAID DOT EXCLUSIVE OF SAID FIRST PORTION TO RAISE THE MELTING POINT OF THE REMAINING PORTION OF SAID DOT.
Claim 2
Independent Claim 61 words
A METHOD FOR MAKING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF ALLOYING A FIRST PORTION OF A DOT COMPRISED OF INDIUM WITH A WAFER OF N-TYPE SILICON TO FORM A P-N JUNCTION AND ALLOYING LEAD INTO AND THROUGHOUT THE REMAINING PORTION OF SAID DOT EXCLUSIVE OF SAID FIRST PORTION TO RAISE THE MELTING POINT OF THE REMAINING PORTION OF SAID DOT.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1964-05-22 1964-11-21 1965-05-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1968-05-22 1968-11-21 1969-05-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1972-05-22 1972-11-21 1973-05-23 $7700.00 Window Closed / Lapsed

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