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US2959502A Expired / Lapsed US ⏱️ 0.0 years remaining

Fabrication of semiconductor devices

Assignee: Individual
•
Filing: 1959-09-01
•
Granted: 1960-11-08
•
Expires: 1979-09-01
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Abstract

No abstract record available.

Inventors

  • 👤 Wolfgang W Gaertner

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 12:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P95/00

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 124 words
THE PROCESS OF MASS-PRODUCING SEMICONDUCTOR DEVICES TO INTRODUCE A P-N JUINCTION THEREIN COMPRISING ETCHING A WAFER OF SEMICONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY TYPE, PRINTING A COMPOSITION UPON THE SURFACE OF SAID SEMICONDUCTOR WAFER AS A PLURALITY OF DOTS EACH SEPARATED BY PREDETERMINED SPACING, WHICH COMPOSITION COMPRISES A PORTION OF IMPURITY OF THE OPPOSITE CONDUCTIVITY TYPE MIXED WITH EQUAL AMOUNTS BY WEIGHT OF A BINDER CONSISTING OF 10 GRAMS NITRO CELLULOSE DISSOLVED IN 400 CUBIC CENTIMETERS AMYL ACETATE, HEATING SAID WAFER AND SAID COMPOSITION AT ABOUT 500*C. FOR ABOUT 2 MINUTES, THEREBY TO FORM A PLURALITY OF P-N JUNCTIONS WITHIN SAID WAFER, RE-ETCHING THE SURFACE OF SAID WAFER CONTAINING SAID JUNCTIONS, AND CUTTING SAID WAFER INTO DICE EACH OF WHICH CONTAINS A P-N JUNCTION.
Claim 2
Dependent Claim 124 words
THE PROCESS OF MASS-PRODUCING SEMICONDUCTOR DEVICES TO INTRODUCE A P-N JUINCTION THEREIN COMPRISING ETCHING A WAFER OF SEMICONDUCTOR MATERIAL OF A FIRST CONDUCTIVITY TYPE, PRINTING A COMPOSITION UPON THE SURFACE OF SAID SEMICONDUCTOR WAFER AS A PLURALITY OF DOTS EACH SEPARATED BY PREDETERMINED SPACING, WHICH COMPOSITION COMPRISES A PORTION OF IMPURITY OF THE OPPOSITE CONDUCTIVITY TYPE MIXED WITH EQUAL AMOUNTS BY WEIGHT OF A BINDER CONSISTING OF 10 GRAMS NITRO CELLULOSE DISSOLVED IN 400 CUBIC CENTIMETERS AMYL ACETATE, HEATING SAID WAFER AND SAID COMPOSITION AT ABOUT 500*C. FOR ABOUT 2 MINUTES, THEREBY TO FORM A PLURALITY OF P-N JUNCTIONS WITHIN SAID WAFER, RE-ETCHING THE SURFACE OF SAID WAFER CONTAINING SAID JUNCTIONS, AND CUTTING SAID WAFER INTO DICE EACH OF WHICH CONTAINS A P-N JUNCTION.

References Cited (Backward Citations)

US2701326A Cited
US2877147A Cited
US2879188A Cited
US2923870A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1963-11-08 1964-05-09 1964-11-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1967-11-08 1968-05-09 1968-11-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1971-11-08 1972-05-09 1972-11-08 $7700.00 Window Closed / Lapsed

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