Method for producing and re-melting compounds having high vapor pressure at the meltig point

Claim 1

A METHOD FOR PRODUCING A MIXED CRYSTAL SEMICONDUCTOR BODY TAKEN FROM THE GROUP CONSISTING OF THOSE OF THE FORMULA (AXB1-X)IIIC1V AND THOSE OF THE FORMULA AIII(CYD1-Y)V, WHERE A AND B ARE COMPONENT ELEMENTS OF THE THIRD GROUP, AND C AND D ARE COMPONENT ELEMENTS OF THE FIFTH GROUP OF THE PERIODIC SYSTEM AND X AND Y ARE EACH GREATER THAN ZERO AND LESS THAN ONE, BY MELTING COMPONENT SUBSTANCES FORMING SAID BODY WITHIN A SEALED SYSTEM, THE PARTIAL VAPOR PRESSURE OF AT LEAST ONE COMPONENT ELEMENT ABOVE THE MELT IN THE STATE OF EQUILIBRIUM BEING CONSIDERABLY HIGHER THAN THE PARTIAL VAPOR PRESSURE OF ANOTHER COMPONENT ELEMENT AND CONSIDERABLY HIGHER THAN THE PARTIAL PRESSURE OF A GASEOUS COMPOUND OF THESE COMPONENT ELEMENTS, THERE BEING NO BOTTOM BODY OF ANY OF THE LOW-BOILING, MORE VOLATILE COMPONENT ELEMENTS PRESENT AT THE TERMINATION OF THE MELTING OPERATION, THE MELT BEING THEREAFTER MADE TO SOLIDIFY RAPIDLY AND IN AN UNORIENTED MANNER IN THE SEALED SYSTEM, THE SPEED OF SOLIDIFICATION BEING SUFFICIENT TO OBTAIN A BODY HAVING A STRUCTURE WHICH IS QUASI-HOMOGENEOUS MACROSCOPICALLY BUT WITH A CRYSTALLINE LATTICE STRUCTURE HETEROGENEOUS FROM THE FINE-STRUCTURAL VIEWPOINT, AND SUBSEQUENTLY ZONE MELTING SAID BODY IN A NARROW MELTING ZONE IN A SEALED SYSTEM SUCCESSIVELY IN TWO MUTUALLY OPPOSED DIRECTIONS TO HOMOGENIZE THE PRODUCT.