US2817608A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Melt-quench method of making transistor devices
Assignee: RCA Corp
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Filing: 1955-05-02
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Granted: 1957-12-24
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Expires: 1975-05-02
Abstract
No abstract record available.
Inventors
- 👤 Jacques I Pankove
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:59
CPC Classifications
H; H10; H10P; H10P95/00; C; C30; C30B; C30B11/00; C30B29/00; C30B29/02; C30B29/08
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
43 words
METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF MELTING THROUGHOUT THE ENTIRE THICKNESS A LONGITUDINAL PORTION OF A CRYSTALLINE SEMI-CONDUCTIVE FILAMENT, SAID FILAMENT INCLUDING BOTH ACCEPTOR AND DONOR CONDUCTIVITY TYPE-DETERMINING IMPURITIES IN RELATIVE PROPORTIONS SUCH THAT THE FOLLOWING RELATIONSHIP IS SATISFIED:
Claim 2
Dependent Claim
43 words
METHOD OF MAKING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF MELTING THROUGHOUT THE ENTIRE THICKNESS A LONGITUDINAL PORTION OF A CRYSTALLINE SEMI-CONDUCTIVE FILAMENT, SAID FILAMENT INCLUDING BOTH ACCEPTOR AND DONOR CONDUCTIVITY TYPE-DETERMINING IMPURITIES IN RELATIVE PROPORTIONS SUCH THAT THE FOLLOWING RELATIONSHIP IS SATISFIED:
References Cited (Backward Citations)
FR1065523A
Cited
US2739088A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-12-23 | 1961-06-24 | 1961-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-12-23 | 1965-06-24 | 1965-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-12-23 | 1969-06-24 | 1969-12-24 | $7700.00 | Window Closed / Lapsed |