Patent US2932878A successfully refreshed from Google Patents.
US2932878A
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Method of making silicon carbide rectifiers
Assignee: Individual
•
Filing: 1958-09-04
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Granted: 1960-04-19
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Expires: 1978-09-04
Abstract
No abstract record available.
Inventors
- 👤 Jacobs Harold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:14
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/01; H10D8/051; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0115; H10D8/043; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/172; Y; Y10; Y10S; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
112 words
THE PROCESS OF MANUFACTURING AN N-TYPE SILICON CARBIDE RECTIFIER, COMPRISING MOUNTING AN N-TYPE SILICON CARBIDE WAFER HAVING A BULK RESISTIVITY OF ABOUT 1 OHM-CENTIMETER IN AN INERT GAS ATMOSPHERE OF ABOUT 300 MILLIMETERS OF MERCURY, SUSPENDING A TUNGSTEN ELECTRODE COATED WITH GOLD-ANTIMONY ALLOY ABOUT .04 INCH ABOVE A SURFACE OF SAID WAFER, APPLYING A DIRECT CURRENT POTENTIAL BETWEEN SAID ELECTRODE AND SAID WAFER, SAID ELECTRODE BEING NEGATIVELY BIASED RELATIVE TO SAID WAFER, MAKING AND BREAKING CONTACT OF SAID ELECTRODE AND SAID WAFER WHILE APPLYING A CURRENT GREATER THAN 0.5 AMPERE BUT LESS THAN 1.0 AMPERE TO FORM INTERMITTENT ARCS BETWEEN SAID ELECTRODE AND SAID WAFER AT A RATE OF ABOUT 30 TIMES
Claim 2
Dependent Claim
112 words
THE PROCESS OF MANUFACTURING AN N-TYPE SILICON CARBIDE RECTIFIER, COMPRISING MOUNTING AN N-TYPE SILICON CARBIDE WAFER HAVING A BULK RESISTIVITY OF ABOUT 1 OHM-CENTIMETER IN AN INERT GAS ATMOSPHERE OF ABOUT 300 MILLIMETERS OF MERCURY, SUSPENDING A TUNGSTEN ELECTRODE COATED WITH GOLD-ANTIMONY ALLOY ABOUT .04 INCH ABOVE A SURFACE OF SAID WAFER, APPLYING A DIRECT CURRENT POTENTIAL BETWEEN SAID ELECTRODE AND SAID WAFER, SAID ELECTRODE BEING NEGATIVELY BIASED RELATIVE TO SAID WAFER, MAKING AND BREAKING CONTACT OF SAID ELECTRODE AND SAID WAFER WHILE APPLYING A CURRENT GREATER THAN 0.5 AMPERE BUT LESS THAN 1.0 AMPERE TO FORM INTERMITTENT ARCS BETWEEN SAID ELECTRODE AND SAID WAFER AT A RATE OF ABOUT 30 TIMES
References Cited (Backward Citations)
US2793332A
Cited
US2854362A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1963-04-19 | 1963-10-19 | 1964-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1967-04-19 | 1967-10-19 | 1968-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1971-04-19 | 1971-10-19 | 1972-04-19 | $7700.00 | Window Closed / Lapsed |