US2854362A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Formation of junction in semi-conductor
Assignee: Individual
•
Filing: 1953-12-03
•
Granted: 1958-09-30
•
Expires: 1973-12-03
Abstract
No abstract record available.
Inventors
- 👤 Frank A Brand
- 👤 Alexander P Ramsa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:44
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/02; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
139 words
THE METHOD OF PREPARING A SEMICONDUCTOR BODY FOR AN ELECTRICAL TRANSLATING DEVICE, COMPRISING SURGING AN ALTERNATING CURRENT IN AN INERT GAS ATMOSPHERE THROUGH AN ARRANGEMENT CONSISTING OF A PROBE, A BLOCK OF SILICON MATERIAL HAVING THEREIN A FIRST SIGNIFICANT IMPURITY SELECTED FROM THE GROUP CONSISTING OF ARSENIC, ANTIMONY, BISMUTH AND PHOSPHORUS, AND A SMALL AMOUNT OF A SECOND SIGNIFICANT IMPURITY BETWEEN SAID PROBE AND BLOCK, SAID SECOND IMPURITY BEING SELECTED FROM THE GROUP CONSISTING OF BORON, ALUMINUM, GALLIUM AND INDIUM, UNTIL SAID SECOND IMPURITY FLOWS ONTO THE POINT OF SAID PROBE, SEPARATING SAID POINT FROM SAID SILICON BLOCK A PREDETERMINED DISTANCE AND PERIODICALLY SURGING SAID CURRENT TO FORM PERIODIC ARCS BETWEEN SAID POINT AND SAID BLOCK, WHEREBY SAID SECOND IMPURITY DIFFUSES INTO SAID BLOCK AND FORMS AN IMPURITY ZONE EXTENDING INWARDLY FROM SAID SURFACE, AND GRADUALLY COOLING SAID BLOCK.
Claim 2
Independent Claim
139 words
THE METHOD OF PREPARING A SEMICONDUCTOR BODY FOR AN ELECTRICAL TRANSLATING DEVICE, COMPRISING SURGING AN ALTERNATING CURRENT IN AN INERT GAS ATMOSPHERE THROUGH AN ARRANGEMENT CONSISTING OF A PROBE, A BLOCK OF SILICON MATERIAL HAVING THEREIN A FIRST SIGNIFICANT IMPURITY SELECTED FROM THE GROUP CONSISTING OF ARSENIC, ANTIMONY, BISMUTH AND PHOSPHORUS, AND A SMALL AMOUNT OF A SECOND SIGNIFICANT IMPURITY BETWEEN SAID PROBE AND BLOCK, SAID SECOND IMPURITY BEING SELECTED FROM THE GROUP CONSISTING OF BORON, ALUMINUM, GALLIUM AND INDIUM, UNTIL SAID SECOND IMPURITY FLOWS ONTO THE POINT OF SAID PROBE, SEPARATING SAID POINT FROM SAID SILICON BLOCK A PREDETERMINED DISTANCE AND PERIODICALLY SURGING SAID CURRENT TO FORM PERIODIC ARCS BETWEEN SAID POINT AND SAID BLOCK, WHEREBY SAID SECOND IMPURITY DIFFUSES INTO SAID BLOCK AND FORMS AN IMPURITY ZONE EXTENDING INWARDLY FROM SAID SURFACE, AND GRADUALLY COOLING SAID BLOCK.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-09-29 | 1962-03-31 | 1962-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-09-29 | 1966-03-31 | 1966-09-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-09-29 | 1970-03-31 | 1970-09-30 | $7700.00 | Window Closed / Lapsed |