Patent US2809135A successfully refreshed from Google Patents.
US2809135A
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Method of forming p-n junctions in semiconductor material and apparatus therefor
Assignee: GTE Sylvania Inc
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Filing: 1952-07-22
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Granted: 1957-10-08
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Expires: 1972-07-22
Abstract
No abstract record available.
Inventors
- 👤 Koury Frederic
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:03
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/10; C30B15/12; Y; Y10; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1032; Y10T117/1052
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
59 words
THE METHOD OF FORMING A P-N JUNCTION IN A CRYSTALLINE SEMICONDUCTOR, WHICH INCLUDES THE STEPS OF PROVIDING IN A FURNACE CHAMBER A MELT OF A SEMICONDUCTOR CONTAINING PREDOMINANTLY AN IMPURITY EFFECTIVE TO IMPART ONE CONDUCTIVITY TYPE TO THE SEMICONDUCTOR, PROVIDING IN SAID CHAMBER ANOTHER MELT OF A SEMICONDUCTOR CONTAINING AN IMPURITY EFFECTIVE TO IMPART THE OPPOSITE TYPE OF CONDUC-
Claim 2
Independent Claim
59 words
THE METHOD OF FORMING A P-N JUNCTION IN A CRYSTALLINE SEMICONDUCTOR, WHICH INCLUDES THE STEPS OF PROVIDING IN A FURNACE CHAMBER A MELT OF A SEMICONDUCTOR CONTAINING PREDOMINANTLY AN IMPURITY EFFECTIVE TO IMPART ONE CONDUCTIVITY TYPE TO THE SEMICONDUCTOR, PROVIDING IN SAID CHAMBER ANOTHER MELT OF A SEMICONDUCTOR CONTAINING AN IMPURITY EFFECTIVE TO IMPART THE OPPOSITE TYPE OF CONDUC-
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1960-10-07 | 1961-04-08 | 1961-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1964-10-07 | 1965-04-08 | 1965-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1968-10-07 | 1969-04-08 | 1969-10-08 | $7700.00 | Window Closed / Lapsed |