US20040100570A1 — Image sensor and digital camera

Claim 1

Independent Claim 57 words

1 . A color solid-state image pickup device including a plurality of photoelectric conversion areas provided in an array pattern on a surface of a semiconductor substrate, wherein the inside of each of said photoelectric conversion areas is two-dimensionally partitioned into a plurality of segments which output a plurality of photoelectric conversion signals of different spectral sensitivities.

Claim 2

Dependent Claim 57 words

1 . A color solid-state image pickup device including a plurality of photoelectric conversion areas provided in an array pattern on a surface of a semiconductor substrate, wherein the inside of each of said photoelectric conversion areas is two-dimensionally partitioned into a plurality of segments which output a plurality of photoelectric conversion signals of different spectral sensitivities.

Claim 3

Dependent Claim 77 words

2 . A color solid-state image pickup device including a plurality of photoelectric conversion areas provided in an array pattern on a surface of a semiconductor substrate, wherein an inside of each of said photoelectric conversion areas is two-dimensionally partitioned into a plurality of segments which store signal electric charges of different spectral sensitivities, and transfer channels are formed beside said photoelectric conversion areas for transferring said signal electric charges read from a plurality of said segments.

Claim 4

Dependent Claim 77 words

2 . A color solid-state image pickup device including a plurality of photoelectric conversion areas provided in an array pattern on a surface of a semiconductor substrate, wherein an inside of each of said photoelectric conversion areas is two-dimensionally partitioned into a plurality of segments which store signal electric charges of different spectral sensitivities, and transfer channels are formed beside said photoelectric conversion areas for transferring said signal electric charges read from a plurality of said segments.

Claim 5

Dependent Claim 37 words

3 . The color solid-state image pickup device according to claim 1 or 2 , wherein the surface of said semiconductor substrate is covered with a light-shielding film having apertures corresponding to said respective photoelectric conversion areas.

Claim 6

Dependent Claim 43 words

4 . The color solid-state image pickup device according to claim 3 , wherein the diameter or diagonal dimension of said aperture is larger than the wavelength of incident light and smaller than the diameter or diagonal dimension of said photoelectric conversion area.

Claim 7

Dependent Claim 35 words

5 . The color solid-state image pickup device according to claim 1 , wherein the spectral sensitivity of at least one segment is determined by a color filter provided at a position above said segment.

Claim 8

Dependent Claim 41 words

6 . The color solid-state image pickup device according to claim 1 , wherein the spectral sensitivity of at least one segment of said photoelectric conversion area is determined by the distribution of impurities in a depthwise direction of said segment.

Claim 9

Dependent Claim 50 words

7 . The color solid-state image pickup device according to claim 1 , wherein the spectral sensitivity of at least one segment is determined by a color filter provided at a position above said segment as well as by the distribution of impurities in a depthwise direction of said segment.

Claim 10

Dependent Claim 61 words

8 . The color solid-state image pickup device according to claim 6 , wherein said segment has a p-well layer provided in an n-type semiconductor substrate, and an n-type impurity layer formed in said p-well layer, and the spectral sensitivity of said segment is determined by selecting the depth of the p-well layer and the depth of the n-type impurity layer.

Claim 11

Dependent Claim 56 words

9 . The color solid-state image pickup device according to claim 8 , wherein a p-well layer of said segment having blue spectral sensitivity, a p-well layer of said segment having green spectral sensitivity, and a p-well layer of said segment having red spectral sensitivity are formed so as to become progressively deeper, in this sequence.

Claim 12

Dependent Claim 74 words

10 . The color solid-state image pickup device according to claim 8 , wherein an n-type impurity layer provided in said p-well layer of said segment having blue spectral sensitivity, an n-type impurity layer provided in said p-well layer of said segment having green spectral sensitivity, and an n-type impurity layer provided in said p-well layer of said segment having red spectral sensitivity are formed so as to become progressively deeper, in this sequence.

Claim 13

Dependent Claim 49 words

11 . The color solid-state image pickup device according to claim 1 , wherein each of said photoelectric conversion areas is two-dimensionally partitioned into at least three segments, that is, a segment having red spectral sensitivity, a segment having green spectral sensitivity, and a segment having blue spectral sensitivity.

Claim 14

Dependent Claim 55 words

12 . The color solid-state image pickup device according to claim 1 , wherein each of said photoelectric conversion areas is two-dimensionally partitioned into at least four segments, that is, a segment having yellow spectral sensitivity, a segment having cyan spectral sensitivity, a segment having magenta spectral sensitivity, and a segment having green spectral sensitivity.

Claim 15

Dependent Claim 66 words

13 . The color solid-state image pickup device according to claims 11 , wherein each of said photoelectric conversion areas is two-dimensionally partitioned into at least four segments, that is, a segment having red spectral sensitivity, a segment having green spectral sensitivity, a segment having blue spectral sensitivity, and a segment having spectral sensitivity whose peak appears in the vicinity of a wavelength of 520 nm.

Claim 16

Dependent Claim 51 words

14 . The color solid-state image pickup device according to claim 13 , wherein processing is performed by means of a signal read from said segment having spectral sensitivity whose peak appears in the vicinity of a wavelength of 520 nm, thereby performing color reproduction analogous to a color matching function.

Claim 17

Dependent Claim 34 words

15 . The color solid-state image pickup device according to claim 1 , wherein arrangement of segments having the same spectral sensitivity differs from one photoelectric conversion area to an adjacent photoelectric conversion area.

Claim 18

Dependent Claim 32 words

16 . The color solid-state image pickup device according to claim 1 , wherein at least one of said segments in said photoelectric conversion areas differs in area from the other segments.

Claim 19

Dependent Claim 39 words

17 . The color solid-state image pickup device according to claim 16 , wherein areas of said segments in the photoelectric conversion areas are inversely proportional to the magnitude of relative spectral sensitivity per unit area of each segment.

Claim 20

Dependent Claim 26 words

18 . The color solid-state image pickup device according to claim 1 , wherein said color solid-state image pickup device is used for a digital camera.

Claim 21

Dependent Claim 69 words

19 . A MOS image sensor having a plurality of photoelectric conversion areas provided in an array pattern on a surface of a semiconductor substrate, wherein an inside of each of said photoelectric conversion areas is two-dimensionally partitioned into a plurality of segments which output photoelectric conversion signals having a plurality of different spectral sensitivities, and peripheral circuits connected to said segments are arranged around said photoelectric conversion areas.

Claim 22

Dependent Claim 69 words

19 . A MOS image sensor having a plurality of photoelectric conversion areas provided in an array pattern on a surface of a semiconductor substrate, wherein an inside of each of said photoelectric conversion areas is two-dimensionally partitioned into a plurality of segments which output photoelectric conversion signals having a plurality of different spectral sensitivities, and peripheral circuits connected to said segments are arranged around said photoelectric conversion areas.

Claim 23

Dependent Claim 33 words

20 . The MOS image sensor according to claim 19 , wherein the surface of said semiconductor substrate is covered with a light-shielding film having apertures assigned to said respective photoelectric conversion areas.

Claim 24

Dependent Claim 41 words

21 . The MOS image sensor according to claim 20 , wherein the diameter or diagonal dimension of said aperture is larger than the wavelength of incident light and smaller than the diameter or diagonal dimension of said photoelectric conversion area.

Claim 25

Dependent Claim 23 words

22 . The MOS image sensor according to claim 20 , wherein one microlens is provided so as to correspond to one aperture.

Claim 26

Dependent Claim 30 words

23 . The MOS image sensor according to claim 19 , wherein photoelectric conversion signals are sequentially read from respective segments into which said photoelectric conversion area is two-dimensionally partitioned.

Claim 27

Dependent Claim 28 words

24 . The MOS image sensor according to claim 23 , wherein the photoelectric conversion signals read from said respective segments are output to a common signal line.

Claim 28

Dependent Claim 30 words

25 . The MOS image sensor according to claim 19 , wherein the spectral sensitivity of at least one segment is determined by a color filter provided above said segment.

Claim 29

Dependent Claim 39 words

26 . The MOS image sensor according to claim 19 , wherein the spectral sensitivity of at least one segment of said photoelectric conversion areas is determined by the distribution of impurities in a depthwise direction of said segment.

Claim 30

Dependent Claim 42 words

27 . The MOS image sensor according to claim 19 , wherein the spectral sensitivity of at least one segment is determined by a color filter disposed above said segment and the distribution of impurities in a depthwise direction of said segment.

Claim 31

Dependent Claim 59 words

28 . The MOS image sensor according to claim 26 , wherein said segment has a p-well layer provided on an n-type semiconductor substrate, and an n-type impurity layer formed on said p-well layer, and the spectral sensitivity of said segment is determined by selecting the depth of said p-well layer and the depth of said n-type impurity layer.

Claim 32

Dependent Claim 62 words

29 . The MOS image sensor according to claim 28 , wherein the depth of an n-type impurity layer of said segment having blue spectral sensitivity, the depth of an n-type impurity layer of said segment having green spectral sensitivity, and the depth of an n-type impurity layer of said segment having red spectral sensitivity are made progressively deeper, in this sequence.

Claim 33

Dependent Claim 59 words

30 . The MOS image sensor according to claim 28 , wherein the depth of a p-well layer of said segment having blue spectral sensitivity, the depth of a p-well layer of said segment having green spectral sensitivity, and the depth of a p-well layer of said segment having red spectral sensitivity are made progressively deeper, in this sequence.

Claim 34

Dependent Claim 45 words

31 . The MOS image sensor according to claim 19 , wherein said individual photoelectric conversion area is two-dimensionally partitioned into at least three segments; i.e., a segment having red spectral sensitivity, a segment having green spectral sensitivity, and a segment having blue spectral sensitivity.

Claim 35

Dependent Claim 51 words

32 . The MOS image sensor according to claim 19 , wherein said individual photoelectric conversion area is two-dimensionally partitioned into at least four segments; i.e., a segment having yellow spectral sensitivity, a segment having cyan spectral sensitivity, a segment having magenta spectral sensitivity, and a segment having green spectral sensitivity.

Claim 36

Dependent Claim 62 words

33 . The MOS image sensor according to claim 19 , wherein said individual photoelectric conversion area is two-dimensionally partitioned into at least four segments; i.e., a segment having red spectral sensitivity, a segment having green spectral sensitivity, a segment having blue spectral sensitivity, and a segment having spectral sensitivity whose peak appears in the vicinity of a wavelength of 520 nm.

Claim 37

Dependent Claim 50 words

34 . The MOS image sensor according to claim 33 , wherein processing is performed by use of a signal read from said segment having spectral sensitivity whose peak appears in the vicinity of a wavelength of 520 nm, to thus perform color representation analogous to a color matching function.

Claim 38

Dependent Claim 35 words

35 . The MOS image sensor according to claim 19 , further comprising segments which have equivalent spectral sensitivity and are arranged in a different pattern, at a position between said adjacent photoelectric conversion areas.

Claim 39

Dependent Claim 33 words

36 . The MOS image sensor according to claim 19 , wherein the area of at least one segment of said segments within the photoelectric conversion areas differs from that of another segment.

Claim 40

Dependent Claim 38 words

37 . The MOS image sensor according to claim 36 , wherein the area of each segment in the photoelectric conversion areas is inversely proportional to the magnitude of relative spectral sensitivity per unit area of said segment.

Claim 41

Dependent Claim 19 words

38 . The MOS image sensor according to claim 19 , wherein the image sensor is of passive type.

Claim 42

Dependent Claim 19 words

39 . The MOS image sensor according to claim 19 , wherein the image sensor is of active type.

Claim 43

Dependent Claim 22 words

40 . The MOS image sensor according to claim 19 , wherein said MOS image sensor is used for a digital camera.

Claim 44

Dependent Claim 30 words

41 . The color solid-state image pickup device according to claim 1 , wherein said array pattern is arranged by offsetting odd lines from even lines by half a pitch.

Claim 45

Dependent Claim 21 words

42 . The MOS image sensor according to claim 19 , wherein said array pattern is arranged in a grid pattern.

Claim 46

Dependent Claim 62 words

43 . An image pickup device including image capturing means for outputting a plurality of photoelectric conversion signals of different spectral sensitivities, wherein said image capturing means includes a plurality of photoelectric conversion areas provided in an array pattern on a surface of a semiconductor substrate, inside of each of said photoelectric conversion areas being two-dimensionally partitioned into a plurality of segments.

Claim 47

Dependent Claim 62 words

43 . An image pickup device including image capturing means for outputting a plurality of photoelectric conversion signals of different spectral sensitivities, wherein said image capturing means includes a plurality of photoelectric conversion areas provided in an array pattern on a surface of a semiconductor substrate, inside of each of said photoelectric conversion areas being two-dimensionally partitioned into a plurality of segments.

Claim 48

Dependent Claim 87 words

44 . An image pickup device for outputting a plurality of photoelectric conversion signals of different spectral sensitivities comprising: signal storing means for storing electric charges of different spectral sensitivities in a plurality of segments which are partitioned by dividing an inside of a plurality of photoelectric conversion areas being formed in an array pattern on a surface of a semiconductor substrate, and signal transfer means for transferring said electric charges read from a plurality of said segments through channels being formed beside said photoelectric conversion areas.

Claim 49

Dependent Claim 87 words

44 . An image pickup device for outputting a plurality of photoelectric conversion signals of different spectral sensitivities comprising: signal storing means for storing electric charges of different spectral sensitivities in a plurality of segments which are partitioned by dividing an inside of a plurality of photoelectric conversion areas being formed in an array pattern on a surface of a semiconductor substrate, and signal transfer means for transferring said electric charges read from a plurality of said segments through channels being formed beside said photoelectric conversion areas.

Image sensor and digital camera

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag