US20030194508A1
Expired / Lapsed
US
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Deposition methods utilizing microwave excitation, and deposition apparatuses
Assignee: Micron Technology Inc
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Filing: 2002-04-11
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Granted: —
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Expires: 2022-04-11
Abstract
Abstract The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention also includes deposition methods (such as CVD or ALD methods) in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.
Inventors
- 👤 Craig Carpenter
- 👤 Ross Dando
- 👤 Philip Campbell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:22
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/22; C23C16/30; C23C16/40; C23C16/50; C23C16/511; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01Q; H01Q21/00; H01Q21/0087
Claims Analysis
Total Claims: 74
Claim 1
Independent Claim
40 words
1 . A deposition method comprising microwave excitation of a component within a reaction chamber during deposition of a material over a substrate within the reaction chamber; the excitation resulting from phased array microwave radiation passing into the reaction chamber.
Claim 2
Dependent Claim
40 words
1 . A deposition method comprising microwave excitation of a component within a reaction chamber during deposition of a material over a substrate within the reaction chamber; the excitation resulting from phased array microwave radiation passing into the reaction chamber.
Claim 3
Dependent Claim
29 words
2 . The method of claim 1 further comprising: flowing a precursor into the reaction chamber; and reacting the precursor with the microwave excited component to form the material.
Claim 4
Dependent Claim
30 words
3 . The method of claim 2 wherein the precursor bonds to the substrate and thereafter reacts with the microwave excited component to form the material deposited on the substrate.
Claim 5
Dependent Claim
26 words
4 . The method of claim 2 wherein the precursor reacts with the microwave excited component to form the material which thereafter accumulates on the substrate.
Claim 6
Dependent Claim
22 words
5 . The method of claim 1 wherein the component is associated with a surface of the substrate during the microwave excitation.
Claim 7
Dependent Claim
22 words
6 . The method of claim 1 wherein the component is not on a surface of the substrate during the microwave excitation.
Claim 8
Dependent Claim
21 words
7 . The method of claim 1 wherein the microwave excited component is part of a plasma within the reaction chamber.
Claim 9
Dependent Claim
23 words
8 . The method of claim 1 wherein the microwave excited component is selected from the group consisting of H, 0 and N.
Claim 10
Dependent Claim
28 words
9 . The method of claim 1 wherein the material deposited over the substrate comprises a product which includes at least a portion of the microwave excited component.
Claim 11
Dependent Claim
21 words
10 . The method of claim 1 wherein the material deposited over the substrate does not comprise the microwave excited component.
Claim 12
Dependent Claim
17 words
11 . The method of claim 1 wherein the deposition method is a chemical vapor deposition method.
Claim 13
Dependent Claim
17 words
12 . The method of claim 1 wherein the deposition method is an atomic layer deposition method.
Claim 14
Dependent Claim
94 words
13 . The method of claim 1 wherein the deposition method is an atomic layer deposition method, the method further comprising: sequentially pulsing first and second components into the reaction chamber and purging the components from the reaction chamber between the sequential pulses; the microwave excited component being at least one of the first and second components; and the microwave excitation resulting from pulses of microwave radiation into the chamber; the pulses of microwave radiation substantially coinciding with the pulses of one or both of the first and second components into the reaction chamber.
Claim 15
Dependent Claim
80 words
14 . A deposition method, comprising: providing an apparatus comprising a reaction chamber and a microwave source external to the chamber; the reaction chamber comprising a window through which microwave radiation can pass; passing microwaves from the source, through the window, and into the chamber; placing a substrate within the reaction chamber; flowing one or more materials within the reaction chamber and through the microwaves; and depositing at least a component of the one or more materials onto the substrate.
Claim 16
Dependent Claim
80 words
14 . A deposition method, comprising: providing an apparatus comprising a reaction chamber and a microwave source external to the chamber; the reaction chamber comprising a window through which microwave radiation can pass; passing microwaves from the source, through the window, and into the chamber; placing a substrate within the reaction chamber; flowing one or more materials within the reaction chamber and through the microwaves; and depositing at least a component of the one or more materials onto the substrate.
Claim 17
Dependent Claim
35 words
15 . The method of claim 14 wherein the microwave radiation is associated with a beam that is emitted along a first axis into the chamber and swept along a second axis within the chamber.
Claim 18
Dependent Claim
42 words
16 . The method of claim 14 wherein the microwave radiation is associated with a beam that is emitted along a first axis into the chamber and swept along a second axis within the chamber, the second axis being a linear axis.
Claim 19
Dependent Claim
42 words
17 . The method of claim 14 wherein the microwave radiation is associated with a beam that is emitted along a first axis into the chamber and swept along a second axis within the chamber, the second axis being a rotational axis.
Claim 20
Dependent Claim
15 words
18 . The method of claim 14 wherein the window comprises quartz, mica or plastic.
Claim 21
Dependent Claim
24 words
19 . The method of claim 14 wherein the microwave source passes a phased array of microwaves through the window and into the chamber.
Claim 22
Dependent Claim
14 words
20 . The method of claim 14 wherein the substrate is a semiconductor substrate.
Claim 23
Dependent Claim
14 words
21 . The method of claim 14 wherein the depositing comprises chemical vapor deposition.
Claim 24
Dependent Claim
14 words
22 . The method of claim 14 wherein the depositing comprises atomic layer deposition.
Claim 25
Dependent Claim
33 words
23 . The method of claim 14 wherein the materials flowed through the microwaves comprise a metal-containing material and oxygen, and wherein the depositing forms an oxide of the metal over the substrate.
Claim 26
Dependent Claim
33 words
24 . The method of claim 14 wherein the materials flowed through the microwaves comprise a metal-containing material and nitrogen, and wherein the depositing forms an nitride of the metal over the substrate.
Claim 27
Dependent Claim
37 words
25 . The method of claim 14 wherein the materials flowed through the microwaves comprise a metal-containing material and hydrogen, and wherein the depositing forms a film comprising the metal of the metal-containing material over the substrate.
Claim 28
Dependent Claim
30 words
26 . The method of claim 14 wherein the materials flowed through the microwaves comprise a titanium-containing material and oxygen, and wherein the depositing forms titanium oxide over the substrate.
Claim 29
Dependent Claim
30 words
27 . The method of claim 14 wherein the materials flowed through the microwaves comprise a titanium-containing material and nitrogen, and wherein the depositing forms titanium nitride over the substrate.
Claim 30
Dependent Claim
141 words
28 . A deposition method, comprising: providing an apparatus comprising a reaction chamber and a microwave source external to the chamber; the reaction chamber comprising a window through which microwave radiation can pass; placing a substrate within the reaction chamber; flowing one or more one microwave-inducible constituents into the reaction chamber; flowing one or more precursors into the reaction chamber; while the substrate and the one or more microwave-inducible constituents are within the reaction chamber, activating at least one of the microwave-inducible constituents with microwave radiation to form at least one activated species; depositing at least a component of at least one of the one or more precursors onto the substrate; and reacting the at least one of the one or more precursors with the activated species, the reacting occurring at one or more of before, after and during the depositing.
Claim 31
Dependent Claim
141 words
28 . A deposition method, comprising: providing an apparatus comprising a reaction chamber and a microwave source external to the chamber; the reaction chamber comprising a window through which microwave radiation can pass; placing a substrate within the reaction chamber; flowing one or more one microwave-inducible constituents into the reaction chamber; flowing one or more precursors into the reaction chamber; while the substrate and the one or more microwave-inducible constituents are within the reaction chamber, activating at least one of the microwave-inducible constituents with microwave radiation to form at least one activated species; depositing at least a component of at least one of the one or more precursors onto the substrate; and reacting the at least one of the one or more precursors with the activated species, the reacting occurring at one or more of before, after and during the depositing.
Claim 32
Dependent Claim
14 words
29 . The method of claim 28 wherein the reacting occurs before the depositing.
Claim 33
Dependent Claim
14 words
30 . The method of claim 28 wherein the reacting occurs after the depositing.
Claim 34
Dependent Claim
14 words
31 . The method of claim 28 wherein the reacting occurs during the depositing.
Claim 35
Dependent Claim
15 words
32 . The method of claim 28 wherein the window comprises quartz, mica or plastic.
Claim 36
Dependent Claim
17 words
33 . The method of claim 28 wherein the microwave source comprises a phased array microwave antenna.
Claim 37
Dependent Claim
22 words
34 . The method of claim 28 wherein the microwave-inducible constituent is selected from the group consisting of O, H, and N.
Claim 38
Dependent Claim
24 words
35 . The method of claim 28 wherein the at least one activated species is part of a plasma generated from the microwave radiation.
Claim 39
Dependent Claim
56 words
36 . The method of claim 28 wherein: the microwave-inducible constituent is selected from the group consisting of O, H, and N; the deposited component comprises fragment of the precursor, but not an entirety of the precursor; and the fragment is formed when the at least one activated species reacts with the at least one precursor.
Claim 40
Dependent Claim
43 words
37 . The method of claim 28 wherein the microwave source extends across an expanse and generates microwaves along the expanse, the microwaves along one portion of the expanse being selectively tuned relative to the microwaves along a different portion of the expanse.
Claim 41
Dependent Claim
64 words
38 . The method of claim 28 wherein the microwave source extends across an expanse and generates microwaves along the expanse, the microwaves along one portion of the expanse being selectively tuned relative to the microwaves along a different portion of the expanse; and wherein the tuned microwaves form a band of radiation which sweeps across a surface of the substrate during the depositing.
Claim 42
Dependent Claim
151 words
39 . A deposition method, comprising: providing an apparatus comprising a reaction chamber; a microwave source external to the chamber, and an inlet port extending through the microwave source and into the reaction chamber; the reaction chamber comprising a window through which microwave radiation can pass, and the inlet port extending through the window and terminating in an opening under the window; the apparatus further comprising a gas dispersion plate beneath the opening; passing microwaves from the source, through the window, through the dispersion plate, and into the chamber; placing a substrate within the reaction chamber and under the dispersion plate; flowing one or more materials through the inlet port, across and through the dispersion plate, and into the reaction chamber; the one or more materials being subjected to the microwaves while in the reaction chamber; and depositing at least a component of the one or more materials onto the substrate.
Claim 43
Dependent Claim
151 words
39 . A deposition method, comprising: providing an apparatus comprising a reaction chamber; a microwave source external to the chamber, and an inlet port extending through the microwave source and into the reaction chamber; the reaction chamber comprising a window through which microwave radiation can pass, and the inlet port extending through the window and terminating in an opening under the window; the apparatus further comprising a gas dispersion plate beneath the opening; passing microwaves from the source, through the window, through the dispersion plate, and into the chamber; placing a substrate within the reaction chamber and under the dispersion plate; flowing one or more materials through the inlet port, across and through the dispersion plate, and into the reaction chamber; the one or more materials being subjected to the microwaves while in the reaction chamber; and depositing at least a component of the one or more materials onto the substrate.
Claim 44
Dependent Claim
16 words
40 . The deposition method of claim 39 wherein the window comprises quartz, mica or plastic.
Claim 45
Dependent Claim
15 words
41 . The deposition method of claim 39 wherein the window consists essentially of quartz.
Claim 46
Dependent Claim
26 words
42 . The deposition method of claim 39 wherein the gas dispersion plate comprises quartz, mica or plastic; and has a plurality of openings extending therethrough.
Claim 47
Dependent Claim
24 words
43 . The deposition method of claim 39 wherein the gas dispersion plate consists essentially of quartz having a plurality of openings extending therethrough.
Claim 48
Dependent Claim
19 words
44 . The deposition method of claim 39 wherein the window and gas dispersion plate consist essentially of quartz.
Claim 49
Dependent Claim
17 words
45 . The deposition method of claim 39 wherein the microwave source comprises a phased array antenna.
Claim 50
Dependent Claim
44 words
46 . The deposition method of claim 39 wherein the microwave source extends across an expanse and generates microwaves along the expanse, the microwaves along one portion of the expanse being selectively tuned relative to the microwaves along a different portion of the expanse.
Claim 51
Dependent Claim
65 words
47 . The deposition method of claim 39 wherein the microwave source extends across an expanse and generates microwaves along the expanse, the microwaves along one portion of the expanse being selectively tuned relative to the microwaves along a different portion of the expanse; and wherein the tuned microwaves form a band of radiation which sweeps across a surface of the substrate during the depositing.
Claim 52
Dependent Claim
48 words
48 . A deposition apparatus, comprising: a reaction chamber; a microwave source external to the chamber and configured to direct microwave radiation toward the chamber; and a window in a side of the reaction chamber through which microwave radiation from the microwave source can pass into the chamber.
Claim 53
Dependent Claim
48 words
48 . A deposition apparatus, comprising: a reaction chamber; a microwave source external to the chamber and configured to direct microwave radiation toward the chamber; and a window in a side of the reaction chamber through which microwave radiation from the microwave source can pass into the chamber.
Claim 54
Dependent Claim
15 words
49 . The apparatus of claim 48 further comprising a substrate holder within the chamber.
Claim 55
Dependent Claim
18 words
50 . The apparatus of claim 49 wherein the substrate holder is in a path of the radiation.
Claim 56
Dependent Claim
22 words
51 . The apparatus of claim 49 wherein the substrate holder is configured to regulate a temperature of a substrate held thereby.
Claim 57
Dependent Claim
20 words
52 . The apparatus of claim 49 wherein the substrate holder includes a heater for heating a substrate held thereby.
Claim 58
Dependent Claim
55 words
53 . The apparatus of claim 49 wherein the substrate holder is configured to retain a semiconductive material wafer within the reaction chamber, and wherein the microwave source is configured to emit a phased array of microwave radiation into the chamber and across an entire surface of a semiconductive material wafer retained within the chamber.
Claim 59
Dependent Claim
47 words
54 . The apparatus of claim 49 wherein the substrate holder is configured to retain a semiconductive material wafer within the reaction chamber, and wherein the microwave source is a phased array antenna which extends across an entirety of a semiconductive material wafer retained within the chamber.
Claim 60
Dependent Claim
15 words
55 . The apparatus of claim 48 wherein the window comprises quartz, mica or plastic.
Claim 61
Dependent Claim
14 words
56 . The apparatus of claim 48 wherein the window consists essentially of quartz.
Claim 62
Dependent Claim
24 words
57 . The apparatus of claim 48 wherein the microwave source is configured to emit a phased array of microwave radiation into the chamber.
Claim 63
Dependent Claim
90 words
58 . A deposition apparatus, comprising: a reaction chamber comprising a window; a microwave source external to the chamber and configured to emit microwave radiation through the window and into the reaction chamber; an inlet port extending through the microwave source and into the reaction chamber; the inlet port extending through the window and terminating in an opening under the window; a gas dispersion plate within the reaction chamber and beneath the opening of the inlet port; and a substrate holder within the chamber and beneath the gas dispersion plate.
Claim 64
Dependent Claim
90 words
58 . A deposition apparatus, comprising: a reaction chamber comprising a window; a microwave source external to the chamber and configured to emit microwave radiation through the window and into the reaction chamber; an inlet port extending through the microwave source and into the reaction chamber; the inlet port extending through the window and terminating in an opening under the window; a gas dispersion plate within the reaction chamber and beneath the opening of the inlet port; and a substrate holder within the chamber and beneath the gas dispersion plate.
Claim 65
Dependent Claim
22 words
59 . The apparatus of claim 58 wherein the substrate holder is configured to regulate a temperature of a substrate held thereby.
Claim 66
Dependent Claim
20 words
60 . The apparatus of claim 58 wherein the substrate holder includes a heater for heating a substrate held thereby.
Claim 67
Dependent Claim
15 words
61 . The apparatus of claim 58 wherein the window comprises quartz, mica or plastic.
Claim 68
Dependent Claim
14 words
62 . The apparatus of claim 58 wherein the window consists essentially of quartz.
Claim 69
Dependent Claim
25 words
63 . The apparatus of claim 58 wherein the gas dispersion plate comprises quartz, mica or plastic; and has a plurality of openings extending therethrough.
Claim 70
Dependent Claim
23 words
64 . The apparatus of claim 58 wherein the gas dispersion plate consists essentially of quartz having a plurality of openings extending therethrough.
Claim 71
Dependent Claim
18 words
65 . The apparatus of claim 58 wherein the window and gas dispersion plate consist essentially of quartz.
Claim 72
Dependent Claim
24 words
66 . The apparatus of claim 58 wherein the microwave source is configured to emit a phased array of microwave radiation into the chamber.
Claim 73
Dependent Claim
55 words
67 . The apparatus of claim 58 wherein the substrate holder is configured to retain a semiconductive material wafer within the reaction chamber, and wherein the microwave source is configured to emit a phased array of microwave radiation into the chamber and across an entire surface of a semiconductive material wafer retained within the chamber.
Claim 74
Dependent Claim
47 words
68 . The apparatus of claim 58 wherein the substrate holder is configured to retain a semiconductive material wafer within the reaction chamber, and wherein the microwave source is a phased array antenna which extends across an entirety of a semiconductive material wafer retained within the chamber.
References Cited (Backward Citations)
US6158383A
Cited
US5134965A
Cited
US5749966A
Cited
US5545258A
Cited
US5698036A
Cited
US5645644A
Cited
US5951887A
Cited
US5988104A
Cited
US5788778A
Cited
US6040021A
Cited
US6347602B2
Cited
US6311638B1
Cited
US6446573B2
Cited
US6527908B2
Cited
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