US20030100157A1
Expired / Lapsed
US
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Flash memory with protruded floating gate
Assignee: Vanguard International Semiconductor Corp
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Filing: 2002-06-03
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Granted: —
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Expires: 2022-06-03
Abstract
Abstract A method of forming a flash memory with a protruded floating gate. A substrate is provided. An isolation area and a plurality of patterned conductive layers are sequentially formed on the substrate. The isolation area protrudes from the upper surface of the substrate to isolate the patterned conductive layers. A photo resist layer is formed on the patterned conductive layer. The present invention also provides a flash memory with a protruded floating gate comprised a substrate, a plurality of protruded floating gates, an insulator, and a control gate.
Inventors
- 👤 Scott Hsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:35
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/6891; H10D30/681; H10D30/684; H10D64/00; H10D64/01; H10D64/031; H10D64/035
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
121 words
1 . A method of forming a flash memory with a protruded floating gate, comprising the steps of: providing a substrate; sequentially forming an isolation area and a plurality of patterned conductive layers on the substrate, wherein the isolation area protrudes from the upper surface of the substrate to isolate the patterned conductive layers; forming a photo resist layer on at least one of the patterned conductive layers, wherein the surface area of the photo resist layer is smaller than that of the that of the corresponding of the patterned conductive layer; isotropically etching the patterned conductive layers to form a protruded floating gate; removing the photo resist layer; and sequentially forming an insulator and a control gate on the substrate.
Claim 2
Dependent Claim
121 words
1 . A method of forming a flash memory with a protruded floating gate, comprising the steps of: providing a substrate; sequentially forming an isolation area and a plurality of patterned conductive layers on the substrate, wherein the isolation area protrudes from the upper surface of the substrate to isolate the patterned conductive layers; forming a photo resist layer on at least one of the patterned conductive layers, wherein the surface area of the photo resist layer is smaller than that of the that of the corresponding of the patterned conductive layer; isotropically etching the patterned conductive layers to form a protruded floating gate; removing the photo resist layer; and sequentially forming an insulator and a control gate on the substrate.
Claim 3
Dependent Claim
28 words
2 . The method of forming a flash memory with a protruded floating gate according to claim 1 , wherein the isolation area is STI (Shallow Trench Isolation).
Claim 4
Dependent Claim
25 words
3 . The method of forming a flash memory with a protruded floating gate according to claim 1 , wherein the insulator is inter-gate oxide.
Claim 5
Dependent Claim
49 words
4 . A flash memory with a protruded floating gate comprising: a substrate, having an isolation area; a protruded floating gate, formed on the substrate and isolated by the isolation area; an insulator, formed over the substrate and the floating gate; and a control gate, formed over the insulator.
Claim 6
Dependent Claim
49 words
4 . A flash memory with a protruded floating gate comprising: a substrate, having an isolation area; a protruded floating gate, formed on the substrate and isolated by the isolation area; an insulator, formed over the substrate and the floating gate; and a control gate, formed over the insulator.
Claim 7
Dependent Claim
24 words
5 . The flash memory with a protruded floating gate according to claim 4 , wherein the isolation layer is STI (Shallow Trench Isolation).
Claim 8
Dependent Claim
22 words
6 . The flash memory with a protruded floating gate according to claim 4 , wherein the protruded floating gate is tip-shaped.
Claim 9
Dependent Claim
22 words
7 . The flash memory with a protruded floating gate according to claim 4 , wherein the protruded floating gate is plateau-shaped.
Claim 10
Dependent Claim
21 words
8 . The flash memory with a protruded floating gate according to claim 4 , wherein the insulator is inter-gate oxide.
References Cited (Backward Citations)
US6171909B1
Cited
US6498064B2
Cited
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