US6498064B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Flash memory with conformal floating gate and the method of making the same
Assignee: Vanguard International Semiconductor Corp
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Filing: 2001-05-14
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Granted: 2002-12-24
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Expires: 2021-05-14
Abstract
Abstract A flash memory comprises a substrate having trenches formed therein. A tunneling oxide is formed on a surface of the substrate and adjacent to the trenches. A raised isolation fillers is formed in the trenches and protruding over an upper surface of the substrate, thereby forming a cavity between two adjacent raised isolation fillers. A floating gate is formed along a surface of the cavity to have a U-shaped structure in cross sectional view, wherein the high level of the U-shaped structure is the same with the one of the raised isolation fillers. An isolation structure is formed on the top of the raised isolation fillers and upper surface of the U-shaped structure. A dielectric layer is conformally formed on a surface of the floating gate and the isolation structure. A control gate is formed on the dielectric layer.
Inventors
- 👤 Horng-Huei Tseng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:31
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/30; H10B69/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/6891
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
161 words
A method of manufacturing a flash memory, comprising: forming a first dielectric layer on a semiconductor substrate; patterning said first dielectric layer, said substrate to form trenches in said substrate; forming first isolations into said trenches; removing said first dielectric layer, thereby forming a cavity between said first isolations and said first isolations protruding over said substrate; forming a tunneling oxide on said substrate; forming a first conductive layer on said tunneling oxide and along a surface of said first isolation; forming a second dielectric layer on said first conductive layer; removing a portion of said second dielectric layer to expose said first conductive layer on said first isolation; performing an oxidation to transform said exposed first conductive layer into second isolation, thereby separating said first conductive layer; removing said second dielectric layer; forming a third dielectric layer on a surface of said first conductive layer; and forming a second conductive layer on said third dielectric layer as a control gate.
Claim 2
Independent Claim
161 words
A method of manufacturing a flash memory, comprising: forming a first dielectric layer on a semiconductor substrate; patterning said first dielectric layer, said substrate to form trenches in said substrate; forming first isolations into said trenches; removing said first dielectric layer, thereby forming a cavity between said first isolations and said first isolations protruding over said substrate; forming a tunneling oxide on said substrate; forming a first conductive layer on said tunneling oxide and along a surface of said first isolation; forming a second dielectric layer on said first conductive layer; removing a portion of said second dielectric layer to expose said first conductive layer on said first isolation; performing an oxidation to transform said exposed first conductive layer into second isolation, thereby separating said first conductive layer; removing said second dielectric layer; forming a third dielectric layer on a surface of said first conductive layer; and forming a second conductive layer on said third dielectric layer as a control gate.
Claim 3
Dependent Claim
16 words
The method of claim 1 , wherein said second dielectric layer includes oxide, nitride or SOG.
Claim 4
Dependent Claim
24 words
The method of claim 1 , wherein said second dielectric layer includes oxidation resistant layer that is conformally formed on said first conductive layer.
Claim 5
Dependent Claim
18 words
The method of claim 1 , further comprising removing said second isolation while removing said second dielectric layer.
Claim 6
Dependent Claim
13 words
The method of claim 1 , wherein said first dielectric layer comprises nitride.
Claim 7
Dependent Claim
18 words
The method of claim 5 , wherein said first dielectric layer is removed by hot phosphorus acid solution.
Claim 8
Dependent Claim
17 words
The method of claim 1 , wherein said first conductive layer is removed by chemical mechanical polishing.
Claim 9
Dependent Claim
13 words
The method of claim 1 , wherein said third dielectric layer comprises oxide/nitride.
Claim 10
Dependent Claim
13 words
The method of claim 1 , wherein said third dielectric layer comprises oxide/nitride/oxide.
References Cited (Backward Citations)
US20010002714A1
Cited
US5599727A
Cited
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