Method for growing epitaxial thin film crystal

Abstract

Abstract PURPOSE:To make it possible to accomplish epitaxial growth having a large difference in grating constant or a large difference in thermal expansion coefficient at low defect density by a method wherein the substrate surface to be used for epitaxial growth is processed in such a manner that it has a special structure including recesses and projections. CONSTITUTION:A crystal thin film 2, having the grating constant different from that of a crystal substrate, is epitaxially grown on the crystal substrate 1. At that time, a processing work is conducted on the surface of the substrate 1 to form the structure such as recesses and projections and the like. As a result, the thin film 2 covers an aperture part and it becomes a continuous film before it reaches the critical value. As the thin film 2 on the aperture part is not contacted to the crystal of the substrate 1, it is not subjected to the effect of the crystal field of the substrate, and the crystal is epitaxially grown in lateral direction. Accordingly, the distortion caused by the difference in the grating constant can be alleviated by the elastic bending of the wall between the holes of the substrate 1 or by the bending of the thin film 2 in vertical direction. As a result, the epitaxial growth having a large grating constant difference or the difference in the thermal expansion coefficient can be conducted in low defect density.

Inventors

• 👤 Tadashi Narisawa
• 👤 Tatsuo Yokozuka

Bibliographic Details