Epitaxial growth method for compound semiconductor

Abstract

Abstract PURPOSE:To epitaxially grow a compound semiconductor having excellent crystallizability by using an Si porous layer having a large absorbing capacity of the misfit dislocation generated by the lattice dismatching of Si and the compound semiconductor. CONSTITUTION:When the compound semiconductor single crystal film, consisting of groups III and V or groups II and VI or group IV and group IV, is going to be formed on an Si single crystal substrate, an Si porous layer is formed on the Si substrate by performing an anodic oxidation method, and using said porous layer as a relaxation layer for the distortion and stress caused by the lattice dismatching with Si, a compound semiconductor free from dislocation and with excellent crystallizability is formed of group III and group V, or group II and group VI, or group IV and group IV by epitaxial growth on the Si porous layer. For example, a porous layer is formed on the Si substrate 1 using an anodic oxidation method, and then a GaAs epitaxial growth layer 2 is formed by performing an MOCVD method. At this time, as the MOCVD method has high growing speed in lateral direction, the porous layer is not buried.

Inventors

• 👤 Shigeto Inoue
• 👤 成人 井上
• 👤 Masafumi Shinpo
• 👤 新保　雅文

Bibliographic Details