Treatment of substrate for forming resist film

Abstract

Abstract PURPOSE:To increase the adhesion strength of a resist film to the surface of a substrate, by evaporating an adhesion reinforcing agent in inactive gas, and exposing the substrate in the evaporated atmosphere. CONSTITUTION:Silicon substrates 12 to be treated are aligned in a cassette in a treating box 11. Inactive gas is measured with a flowmeter 14 and supplied through a pipe 13 at the lower part of the box. An adhesion reinforcing agent 15 is arranged in a dish-shaped container 16. In this treating apparatus, the inactive gas is applied on the adhesion reinforcing agent, and the agent is vaporized. The vapor is applied on the silicon substrate and made to react with an OH group on the surface of the substrate. Thus adhesion reinforcing treatment is performed. When the substrate, in which a thermal oxide film is formed on the silicon surface, is used, it is desirable to use hexamethyldisilazane for the adhesion reinforcing agent and to use N2 for the inactive gas.

Inventors

• 👤 Masakazu Akiyama

Bibliographic Details