Manufacture of semiconductor element

Abstract

Abstract PURPOSE:To make it possible to realize in-line processing by placing wafers whose surfaces are cleaned in a heated, hermetically sealed container whose temperature is adjusted, processing them by vapor of surface improving agent, and improving the adhesion of a resist layer in a short time. CONSTITUTION:For example the surface improving agent 10 whose main component is hexamethyldisilazane is put in the hermetically sealed container 11 wherein a heater 15 and a horizontally running conveyer 12 are provided. The internal temperature is kept at e.g. 50 deg.C by a designated temperature adjuster 17. Under this state, a hermetically sealing shutter 14 provided at one side wall of the container is opened, and the wafer 3 on which resist is not applied is inserted from an inlet 13. The vapor treatment by the improving agent 10 is performed for a specified time. When the wafer 3 reaches the other side wall, the other shutter 14 is opened, and the wafer 3 is taken out of the container 11, and the resist applying process is followed. In this method, the time required for obtaining desired adhesion is shortened (to about 1/2) than in the case of room temperature treatment, and the preliminary process for improvement can be performed in the continuous process.

Inventors

• 👤 Toshihiro Abe
• 👤 Masatoshi Matsushita
• 👤 Kensho Kyoto
• 👤 Terumi Rokushiya

Bibliographic Details