Production of semiconductor device

Abstract

Abstract PURPOSE: To obtain good non-rectifying contact by depositing an impurity metal of the same conductivity as that of electrode metal on the electrode forming regions of a semiconductor substrate, applying specified heat treatment then forming electrodes there. CONSTITUTION: A P-type base region 3 is provided on one surface of an N - type Si substrate 1 and an N + type collector connection region 2 on the other surface and an N + type emitter region 4 is provided within the region 3 to provide an N + PN - N + transistor. Next, a part of the region 4 and region 3 is exposed and other regions are covered with a SiO 2 film 6, after which an Al layer 7 is evaporated over the entire surface. Next, the substrate 0 of this structure is put in a furnace 8 and vacuum of 10 -4 to 10 -6 Torr is formed therein, thence the substrate is heated for about 10 minutes with the furnace wall surface 81 to which the region 2 opposes being kept at 800°C and the furnace wall surface 82 to which the Al layer 7 opposes being kept at 750°C. Thereafter, the substrate 10 is turned over to interchange the faces to be opposed to the furnace wall and is heated in a similar manner. By this manner, a good non-rectifying contact layer 10 is producted on the surface layer part of the region 3 under the Al layer 7 and an Al electrode 9 is formed in the region 4. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Takeomi Takase
• 👤 Yoichi Araki

Bibliographic Details