Semiconductor device

Abstract

Abstract PURPOSE:To make a device capable of delivering a potential to an embedded electrode without photoetching at the time of taking the embedded electrode out by forming the first conductive material which is embedded in a groove, and connecting the first and second conductive materials through a contact hole formed right above the groove. CONSTITUTION:A connecting section which delivers a potential to a plate electrode 105 has a square theta-shape in plane view, and a contact hole 131 is formed onto a groove of a part linking one side of a square theta-shaped groove 132 with the facing side thereagainst. When taking a contact for the conductive material 105 from another conductive material 133 formed onto the groove 132 opened on a substrate 100, the conductive material 105 makes contact with a conductive material 103 in the side wall of the groove as well as the Si substrate 100 itself. They must be separated electrically as well as in terms of pattern. The conductive material 103 located on the side wall of the groove, which is always left unpatterned, is separated from other circuits in terms of pattern. Then, the connecting section between the conductive material 133 and the substrate 100 is electrically separated by implanting impurities thereinto.

Inventors

• 👤 Masaki Ogiwara
• 👤 Shizuo Sawada

Bibliographic Details