Semiconductor nonvolatile memory

Abstract

Abstract PURPOSE:To inhibit a tunnel leakage current by a method wherein a channel is provided extending from the end of a floating gate electrode to a drain and the conduction state of this channel is controlled by a control gate electrode. CONSTITUTION:A first channel 11 which is controlled by a selective gate electrode 6 through a selective gate insulating film 5 and a second channel 12 which is controlled by a floating gate electrode 10 through an injection gate insulating film 7 are formed between an N<+> source region 2 and an N<+> drain region 3 which are provided in the vicinity of the surface of a P-type substrate 1. A third channel 13 is provided extending from the end of the electrode 10 to the region 3, and the conduction state of this channel is controlled by a control gate electrode 8.

Inventors

• 👤 Yutaka Hayashi
• 👤 豊 林
• 👤 Ryoji Takada
• 👤 高田　量司
• 👤 Yoshikazu Kojima
• 👤 芳和 小島

Bibliographic Details