JPS51147928A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Non-volatile semiconductor memory
Assignee: NEC Corp
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Filing: 1975-06-13
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Granted: —
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Expires: 1995-06-13
Abstract
Abstract PURPOSE:To provide a N-channel non-volatile semiconductor memory having a high write-in speed by adding a P-type diffused region of high impurity concentration to a drain N-type diffused region in a partial contact relationship.
Inventors
- 👤 Masanori Kikuchi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 14:05
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/686
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