Semiconductor device

Abstract

Abstract PURPOSE:To improve integration density and to prevent increase in diffusion depth, by using the inner surface of a first conductor layer, which has a hollow part in the inside and an opening in the upper surface, and forming a stacked capacitor. CONSTITUTION:An impurity diffused layer 32, which is formed at the surface region of a silicon substrate 31, has a reverse conductivity type with respect to the silicon substrate 31. A first conductor layer 33 is formed on the impurity diffused layer 32. The inside of the first conductor layer 33 is hollow, and an opening is provided in the upper surface of the layer 33. A capacitor insulating film 34 is formed on the inner surface and the upper surface of the first conductor layer 33. When the area of the inner surface of the first conductor layer 33 is expanded, the area of the capacitor can be expanded. Therefore, the desired area of the capacitor can be obtained without bringing the stacked capacitor close to the stacked capacitor in the neighboring memory cell. Therefore, the integration degree can be sufficiently improved in comparison with a conventional device.

Inventors

• 👤 Toshiharu Watanabe
• 👤 渡辺　寿治

Bibliographic Details