Mos type semiconductor memory device

Abstract

Abstract PURPOSE:To obtain a larger memory capacity along with smaller dimensions as a whole by shaping the memory capacity section formed on a semiconductor substrate three dimensional in the construction. CONSTITUTION:A thin dielectric insulator film 3 is applied on an active layer of the semiconductor substrate 1 and an opening is etched in the center thereof to form an impurities diffused region 8 within the substrate 1 exposed. An opening is provided through a dielectric insulator film 3' extended into one of the film 3 to form impurities diffused regions 5 and 5' and both regions are entirely wrapped with a thick oxide film 2. The first impurities containing polycrystal line Si body 6 composing a memory capacity section is so constructed to have a pillarlike part on the undersurface thereof and is fixed with the bottom of the pillarlike body bearing on the region 8 while the outside thereof is wrapped with the film 3. In this manner, the polycrystal Si body is integrated with the film 3 on the substrate 1. Subsequently, the Si body 6 is surrounded by a memory capacity section comprising the second polycrystal line Si 7 containing impurities similarly and a polycrystal line Si gate electrode 7' is applied on the substrate 1 between the regions 5 and 5' through a transmission gate insulator film 3' comprising the film 3' previously provided.

Inventors

• 👤 Masayoshi Ino

Bibliographic Details