Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To simplify the process by forming a contact hole in an insulating layer formed on a substrate, providing a titanium layer covering the contact hole, and forming a titanium nitride layer on the surface of the titanium layer due to heating in nitrogen atmosphere, so as to form only one Ti layer during lamination. CONSTITUTION:An SiO2 layer 2 is provided as an insulating layer on an Si substrate 1 by CVD, the contact hole 3 is formed on the SiO2 layer 2, and then a Ti layer 4 is built up onto the contact hole 3 as a contact layer by sputtering. Ti sputtering is performed using Ti as a target, reducing pressure, and then applying a power of several kW per wafer to the wafer. Next, annealing is conducted by heating the substrate in a nitrogen atmosphere, a TiN layer 5 is formed on the surface of the Ti layer 4, and an Al layer or Al-Si layer 6 being used as a wiring layer is formed on the TiN layer 5. Finally, a wiring pattern is formed by patterning the Al layer 6, TiN layer 5, and Ti layer 4.

Inventors

• 👤 Yasuo Arima
• 👤 康雄 有馬

Bibliographic Details