Long image sensor unit

Abstract

Abstract PURPOSE:To uniformize the characteristics of each photosensor and to contrive to cut down the manufacturing cost of the titled image sensor unit without using a correcting circuit by a method wherein the refractive index of the lowest layer of the laminated film of two layers and more, which respectively have the refractive index different from one another and constitute the photoconductive layer of each photosensor, is specified. CONSTITUTION:A quartz glass substrate or a partially glazed ceramic substrate and so forth are used as a substrate 1. The photoconductive layer consists of an amorphous material comprising a-Si as its main component. The refractive index of an a-Si undercoating layer 2 shall be one of 3.2 or less in the light of a wavelength of 6328Angstrom . The refractive index of an a-Si layer 3 shall be one larger than 3.2 and shall be desirably one of 3.4 or thereabouts. The photoconductive layer is formed by a plasma CVD method, a reactive sputtering method, an ion-plating method and so forth. n<+> type layers 4 are respectively an ohmic contact layer and common electrodes 5 respectively consist of a conductive film of Al and so forth. By such a constitution, the uniformity of the characteristics of each photosensor is improved and the dispersion of signal between bits is reduced.

Inventors

• 👤 Masaki Fukaya
• 👤 深谷　正樹
• 👤 Toshiyuki Komatsu
• 👤 利行 小松
• 👤 Tatsumi Shoji
• 👤 辰美 庄司
• 👤 Masaru Kamio
• 👤 優 神尾
• 👤 Nobuyuki Sekimura
• 👤 関村　信行

Bibliographic Details