Heat processing method for semiconductor thin film

Abstract

Abstract PURPOSE:To improve characteristic of a semiconductor thin film by heating the specified region of semiconductor thin film up to the specified high temperature by irradiating said semiconductor thin film with a laser light to be absorbed therewith for a short period and thereafter heating it at a comparatively low temperature for a comparatively long period. CONSTITUTION:Only a-Si:H film 2 is locally heated up to the specified crystallization temperature by short term irradiation of a laser light 3. Next, the entire part of semiconductor device is heated in an electric furnace for a long period at a comparatively low temperature in order to remove defect or thermal distortion induced by laser light 3 in the a-Si:H film 2. With short term irradiation of laser light, the processing region can be localized and emission of useful substance within the semiconductor to be processed can be suppressed. Moreover, defect of semiconductor by irradiation of laser light can be eliminated by comparatively long term processing at a comparatively low temperature and a semiconductor thin film having good characteristic can be obtained.

Inventors

• 👤 Toshiyuki Samejima
• 👤 俊之 鮫島
• 👤 Setsuo Usui
• 👤 碓井　節夫

Bibliographic Details