Method and apparatus for measuring depth of etching of semiconductor device

Abstract

Abstract PURPOSE:To measure the depth of etching easily by detecting light intensity in a section where the light intensity of diffraction beams from a section to be etched and diffraction beams from a section not etched is brought to the same extent. CONSTITUTION:An etching-depth measuring section consisting of a coherent light source 31, a sensing section 32 and a detecting treating section 34 is mounted to a dry etching device constituted by a vacuum chamber 35, an upper electrode 36, a lower electrode 39 and a high-frequency power supply 40. Coherent light projected from the light source 31 is reflected by a material to be etched 38, and detected by the sensing section 32 as a diffraction pattern. According to such constitution, there is a section, where the intensity of diffraction beams from a through-hole or a deep groove for isolating an element and the intensity of diffraction beams from patterns except said pattern are brought to the same extent, in the diffraction pattern, the treating section 34 detects the change of light intensity at the point, and the through-hole having a minute area and the depth of etching can be measured.

Inventors

• 👤 Minoru Noguchi
• 👤 稔 野口
• 👤 Toru Otsubo
• 👤 徹 大坪
• 👤 Susumu Aiuchi
• 👤 進 相内

Bibliographic Details