Dry etching method

Abstract

Abstract PURPOSE:To prevent or remove the etching residue or produced polysilicon and to suppress the etching of a semiconductor material by etching the semiconductor material with gas which contains at least C, F, O and compounds simultaneously contained as indispensable components. CONSTITUTION:Perfluoroepoxides such as CF2CF2O or perfluoro cyclic ethers such as CF2CF2CH2 is suitable gas, and a mixture of two or more gases containing mainly solely any of them or hexafluoropropylene oxide is employed. When trifluoromethane is mixed at the etching time of SiO2, PSG for these compounds, the formation of polymer can be particularly suppressed while holding the selectivity of the primary Si and a photoresist, and when Cl2 is mixed at the etching time of the polysilicon or metallic film, the etching of high selectivity can be performed at a high speed, and when suitable amount is mixed with hexafluoropropylene oxide, it is similarly effective.

Inventors

• 👤 Makoto Segami
• 👤 瀬上　信
• 👤 Kunihiko Terase
• 👤 邦彦 寺瀬
• 👤 Shinya Iida
• 👤 飯田　進也
• 👤 Hideo Komatsu
• 👤 英雄 小松

Bibliographic Details