Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To manufacture super high integrated circuit by forming an insulation protection film on a semiconductor substrate, and then obtaining an ohmic contact between the substrate with ions implanted to a part or over the entire surface and a metallic film formed thereon. CONSTITUTION:A field oxide film 2 is formed by the thermal oxidation of the P type Si substrate 1, and the element region is formed by a photoetching method. A gate oxide film 3 is formed by another thermal oxidation. After a polycrystalline Si film is formed thereon, a polycrystalline Si gate electrode 4 and the oxide film 3 are formed in the element region. Next, arsenic is implanted and thereafter heat treatment is carried out, resulting in the formation of an N<+> diffused layer 6. Further, W films are selectively formed on the source-drain and the gate electrode after the formation of an SiO2 film. Then, contact holes are bored thereon, and Al wiring 9 are wired.

Inventors

• 👤 Yoshitaka Tsunashima
• 👤 綱島　祥隆

Bibliographic Details