Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a good electrical contact between a substrate and wirings by a method wherein an exposed impurity region is ion-injected with the same conductive type impurity with an insulating film formed a contact hole as a mask. CONSTITUTION:After a gate electrode 3 comprising a field oxide film 2, n<+> regions 5, 6, a gate oxide film 4 and an As-dopted polycrystalline Si is formed on a p type Si substrate 1, an SiO2 film 7 is formed to make openings 81, 82, 83, and after the As is ion-injected to the regions 5, 6 and 3 through the openings to form n type high density regions 91, 92, 93, Al wirings 10, 11, 12 are formed. Thereby, the low resistance contacts of the semiconductor substrate and the wirings can be contrived without increasing an area of the contact hole and causing a depth fluctuation of the impurity region.

Inventors

• 👤 Masahiro Iiri
• 👤 Yoshitaka Hasegawa

Bibliographic Details