JPS5329668A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Production of semiconductor device
Assignee: NEC Corp
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Filing: 1976-08-31
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Granted: —
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Expires: 1996-08-31
Abstract
Abstract PURPOSE: To make the surface of the regions for obtaining ohmic contact with Al amorphous by ion implantation and obtain ohmic contact through the thin amorphous layer thus obtained. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Kenji Ichida
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-05 10:58
CPC Classifications
—
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