Manufacture of semiconductor substrate

Abstract

Abstract PURPOSE:To obtain an silicon-on-insulator having a large area by forming the triple structure of magnesia spinel-SiO2-silicon, using an opening section in the structure as a seed and depositing a single crystal silicon film on the whole surface of a wafer in a homoepitaxial manner. CONSTITUTION:An epitaxial film 11 consisting of MgO.Al2O3 is grown on an Si single crystal substrate 10. When a wafer is thermally oxidized, oxygen diffuses to silicon through magnesia spinel, and SiO2 is formed between magnesia spinel and silicon. A striped pattern is formed to the wafer having obtained triple structure of magnesia spinel-SiO2-silicon. The wafer is charged to an epitaxial growth device, and silicon is deposited. Silicon is not deposited on magnesia spinel because a source gas SiH2Cl2 contains Cl at that time. The film 11 is grown selectively in an epitaxial manner while using silicon in opening sections as seeds. The whole surface is coated with a single crystal 13 in which there is no micro-twin of silicon.

Inventors

• 👤 Akihiko Ishitani
• 👤 石谷　明彦

Bibliographic Details