Formation of semiconductor single crystal film

Abstract

Abstract PURPOSE:To form a single crystal semiconductor film on an insulating film by a method wherein a laser beam is firstly irradiated at the part excluding the insulating film on the surface of a single crystal semiconductor substrate in vapor atmosphere containing a compound having a semiconductor atom and a semiconductor single crystal layer is formed at the part and inrradiation is successively done on the insulating film by using the semiconductor single crystal layer as seed crystal. CONSTITUTION:A wafer 1 is put in the atmosphere of hydrogen gas diluted monosilane gas and a laser beam 3 is irradiated at the wafer surface 5 forming no oxide film. When the temperature at the irradiated region reaches 900 deg.C or over, monosilane is decomposed to generate an Si epitaxial growth layer 4. With the laser beam continuously scanned on the oxide film, epitaxial growth consecutively proceeds in the lateral direction and a single crystal Si thin film is obtained on the whole surface of the wafer. When the temperature at the irradiated region exceeds melting point, liquid epitaxial growth is recognized.

Inventors

• 👤 Yutaka Kobayashi
• 👤 裕 小林
• 👤 Takaya Suzuki
• 👤 誉也 鈴木

Bibliographic Details