Znse blue light emitting diode

Abstract

Abstract PURPOSE:To enable to form a P-N junction of high perfectibility by epitaxial growth. CONSTITUTION:Using Se 4 as the solvent on e.g. an N type ZnSe substrate 3 in a quartz ampule 1, the impurities of I-a and I-b groups of P type impurities are added into the solvent, source crystal ZnSe 5 is arranged on the high temperature side of the solution wherein temperature is formed, and then the solution reaches equilibrium state, thereafter the N type substrate and the low temperature side of the solution are put into contact each other by errecting the entire body of quartz ampule. Epitaxial growth advances at a constant temperature by the diffusion phenomenon caused by the temperature difference shown on the right side of the figure. Further, to control the pressure of Zn of II group elements, the metal Zn 6 is placed into a Zn chamber through the connected body to the growing chamber with a quartz tube of fine inner diameter and through an equivalent quartz spacer 2, and then the temperature of this chamber is controlled most appropriately. After growth for a required time, the solution is isolated from the substrate, resulting in the completion of the growth, and accordingly the P-N junction is formed.

Inventors

• 👤 Junichi Nishizawa
• 👤 潤一 西澤

Bibliographic Details