Manufacture of p-n junction

Abstract

Abstract PURPOSE: To readily form a P-N junction in a II-VI group compound semiconductor of ZnSe or the like b forming a P type region by a temperature difference method liquid phase growing process by controlling the vapor pressure of the VI group element. CONSTITUTION: A P type crystal, for example, of ZnSe formed by a vapor pressure controlling temperature difference method and reducing the vacancy of the VI group element is heat treated, for example, at 900°C of Zn melt for approx. 1hr. Thus, the part from the surface to the depth of approx. 10μm is formed in N type layer of 0.1W1Ω.cm, and a P-N junction can be formed. The ZnSe formed in N type by heat treating in Zn melt for long time is formed to a substrate. The P-N junction is formed by epitaxially growing it by a P type crystal temperature difference method liquid phase growing process in the state that the Se vapor pressure is controlled. Even if Au or AG is doped with the N type ZnSe crystal formed under the control of the vapor pressure so that the number of Se vacanct is lattice point is reduced, the P-N junction can be formed. COPYRIGHT: (C)1982,JPO&Japio

Inventors

• 👤 Junichi Nishizawa
• 👤 Kazutomi Ito
• 👤 Yasuo Okuno

Bibliographic Details