Lead frame for semiconductor

Abstract

Abstract PURPOSE:To constitute a highly reliable and low-cost semiconductor device without using any precious metal at all by a method wherein a tin- or solder-plated layer is provided only on the element arranged part and the external lead part of a lead frame for semiconductor. CONSTITUTION:A glossy nickel-plated layer 4 or a P-Ni alloy-plated layer 5 has been provided on the whole surface of a lead frame 1 and furthermore, a tin- or solder-plated layer 7 has been provided at a die-bonding part 2 and an external lead part 6. For assembling a semiconductor device using this lead frame, the assembling is completed by first die-bonding a silicon pellet 8, which is a semiconductor element, to the tin-plated layer 7 at the teperature of 400 deg.C and then by wire-bonding the silicon pellet 8 and an inner lead part 3 with a wire 9 of Au or Al and, after that, by sealing and protecting with a resin 10 by performing a resin molding.

Inventors

• 👤 Osamu Yoshioka
• 👤 修 吉岡
• 👤 Ryozo Yamagishi
• 👤 山岸　良三
• 👤 Yoshinori Bando
• 👤 坂東　良則

Bibliographic Details