Ion implantation device

Abstract

Abstract PURPOSE:To check secondary emission of electron caused by ion impact and prevent charge up on an insulator by preparing anew an electrode near a substrate to bias said electrode into negative potential in relation to the substrate. CONSTITUTION:An electrode 7 is anew set up in the constitution of a radiation part to give bias voltage EB of -20V-300V to a stand. The position of a regular electrode shall be inside of a Faraday cup and near the stand outside of ion flying range. The distance l between the regular electrode and the stand shall be 1/2-1 times of the ion radiation range. The electrode shall be a plate-shaped body with a drilled hole whereby outer size thereof shall be about 5mm. smaller on both sides than the inside size of the Faraday cup while the inside size shall be made bigger than the ion flying range (shown in Fig. by dotted lines) by 5-10mm..

Inventors

• 👤 Motoo Nakano
• 👤 元雄 中野
• 👤 Haruhisa Mori
• 👤 森　治久

Bibliographic Details