Ion implanting device

Abstract

Abstract PURPOSE:To prevent generation of trouble due to dielectric breakdown of an insulating substances by neutralizing the electric charge accumulated in ion implantation and preventing the rise of the potential by using secondary electrons which are generated through ion-beam radiation during the manufacturing process of semiconductor integrated circuits. CONSTITUTION:Ion beam is irradiated from left into a Faraday box composed of the substrate supporting body 1 for supporting a substrate 2 and a cylindrical structure 3. In the Faraday box, an electrode 7 is installed on the peripheral part of the substrate 2. The electrode 7 is fixed with the electrode support 8 made from insulating materials, and can be biased to negative by a power source 9. Although much secondary electrons more than the number of incident ions are formed, the secondary electrons are returned to the substrate when the electrode 7 is biased to negative, and thus the electrification of the substrate is prevented markedly effectively, and neutralization of the electric charges accumulated is enabled effectively. When the amount of ion beams increases, also the amount of secondary electrons increases, so the device can be used in a simple way.

Inventors

• 👤 「よし」沢　正浩
• 👤 Masahiro Yoshizawa
• 👤 Masayasu Miyake
• 👤 三宅　雅保
• 👤 Michiyuki Harada
• 👤 宙幸 原田
• 👤 Satoshi Tazawa
• 👤 聰 田沢

Bibliographic Details