Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the integration of a semiconductor device by specifying the active region of a semiconductor substrate through an SiO2 film by an Si3N4 film, thereby preventing the variation in the area based on the error or displacing the position of patterning. CONSTITUTION:An Si3N4 mask 11 is formed at a thin SiO2 film 2 on an Si substrate 1. An SiO2 film 12 and an Si3N4 film 13 are laminated, a resist mask 14 is performed, the film 14 is etched, and a field oxidized film forming region is exposed. The mask 14 is removed, is oxidized at a high temperature, and an SiO2 film 15 is formed. Subsequently, the remaining Si3N4 13 is etched, is again oxidized at a high temperature, thereby forming an SiO2 film 16. According to the structure, the variation in the area of the active region can be prevented, and since it is not necessary to provide the margin in the active region, the integration can be improved.

Inventors

• 👤 Masataka Shinguu
• 👤 新宮　正孝
• 👤 Hideo Monma
• 👤 門馬　秀夫

Bibliographic Details